- Mfr. #:
- CGH40006P
- Description:
- RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CGH40006P Information
- GaN HEMTs
- Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Wolfspeed / Cree |
| Packaging: | Tray |
| Subcategory: | Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Product: | GaN HEMT |
| Technology: | GaN |
| Manufacturer: | Cree, Inc. |
| Development Kit: | CGH40006P-TB |
| Output Power: | 9 W |
| Width: | 5.21 mm |
| Package / Case: | 440109 |
| Length: | 4.19 mm |
| Factory Pack Quantity: | 250 |
| Height: | 2.79 mm |
| Operating Frequency: | 2 GHz to 6 GHz |
| Gain: | 13 dB |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Id - Continuous Drain Current: | 0.75 A |
| Minimum Operating Temperature: | - 40 C |
| Vgs th - Gate-Source Threshold Voltage: | - 3 V |
| Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V |
| Maximum Drain Gate Voltage: | - |
| Forward Transconductance - Min: | - |
| Gate-Source Cutoff Voltage: | - |
| Class: | - |
| Pd - Power Dissipation: | - |
| Fall Time: | - |
| NF - Noise Figure: | - |
| P1dB - Compression Point: | - |
| Rds On - Drain-Source Resistance: | - |
| Rise Time: | - |
| Operating Temperature Range: | - |
| Typical Turn-Off Delay Time: | - |
| Application: | - |
| Maximum Operating Temperature: | + 150 C |
CGH40006P Price & Stock
Wolfspeed CGH40006P pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | CGH40006P-ND | 74 | 360.26 | 360.26 | 360.26 | 360.26 | 360.26 | 2019-12-17T13:52:26Z |
| Richardson RFPD | CGH40006P | 35 | 360.26 | 360.26 | 360.26 | 360.26 | 360.26 | 2019-12-18T02:31:18Z |
| Euro-Tech | CGH40006P | 51 | - | - | - | - | - | 2019-12-17T11:41:30Z |
| Sierra IC | CGH40006P | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- Cree, Wolfspeed, CGH40006P, 6 W, DC-6.0 GHz, GaN HEMT
- Cree's CGH40006P is an unmatched, gallium nitride (GaN) high. electron mobility transistor (HEMT). The CGH40006P, operating. from a 28 volt rail, offers a general purpose, broadband solution. to a variety of RF and microwave applications.
- Cree, Wolfspeed, CGH40006P, 6 W, DC-6.0 GHz, GaN HEMT
- CGH40006 - Wolfspeed
- CGH40006P Wolfspeed - Mouser Electronics
- CGH40006P Wolfspeed, Inc. | Discrete Semiconductor ProductsCGH40006P-AMP Wolfspeed, Inc. | RF/IF and RFID | DigiKey
- CGH40006P Wolfspeed - Richardson RFPD
- CGH40006P-AMP by Wolfspeed | Unclassified | Arrow.com
- CGH40006P Datasheet | Cree - Datasheetspdf.com
- CGH40006P Wolfspeed - MOSFETs - Octopart
- Packaged model of the CGH40006P GaN HEMT.
Alternate Names
Wolfspeed has several brands around the world that may have alternate names for CGH40006P due to regional differences or acquisition. CGH40006P may also be known as the following names: