IPB80N06S407ATMA2 - Infineon Technologies

Mfr. #:
IPB80N06S407ATMA2
Description:
MOSFET N-Ch 60V 80A D2PAK-2
Lifecycle:
New from this manufacturer.
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IPB80N06S407ATMA2 Information

N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Specifications

RoHS: Y
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPB80N06S4-07 IPB8N6S47XT SP001028672
Series: IPB80N06S4
Qualification: AEC-Q101
Width: 9.25 mm
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 7.1 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Height: 4.4 mm
Factory Pack Quantity: 1000
Length: 10 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.068654 oz

IPB80N06S407ATMA2 Price & Stock

Infineon IPB80N06S407ATMA2 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester ElectronicsIPB80N06S407ATMA26,6874.214.213.723.443.442019-12-21T10:03:15Z
RS Components 38269440750--6.125.685.682019-12-24T00:12:59Z
RS Components8269440P750--6.125.685.682019-12-24T00:12:59Z
RS Components1655700----4.234.232019-12-24T00:12:59Z
Mouser726-IPB80N06S407ATMA5799.688.286.374.453.802019-12-15T03:27:54Z
Arrow Electronics 2IPB80N06S407ATMA26400.8220.8220.8220.8220.8222019-12-23T16:07:31Z
Arrow ElectronicsIPB80N06S407ATMA22808.867.675.985.925.922019-12-23T16:07:31Z
Digi-Key 2IPB80N06S407ATMA2-ND----4.304.302019-12-23T15:38:40Z
Digi-KeyIPB80N06S407ATMA1TR-ND----4.104.102019-12-23T15:38:40Z
Verical 2IPB80N06S407ATMA2640--0.7150.7150.7152019-12-23T17:46:21Z
VericalIPB80N06S407ATMA2280--5.725.725.722019-12-23T17:46:21Z
AvnetIPB80N06S407ATMA2----3.603.302019-12-21T03:35:55Z
Avnet EuropeSP001028672----6.854.732019-12-23T08:29:42Z
LTL Group40469761,208-----2019-12-23T01:29:13Z
Dana MicrosystemsIPB80N06S4-0728-----2019-12-18T03:40:52Z
Abacus TechnologiesIPB80N06S407ATMA2261-----2019-12-06T00:07:36Z
Sierra ICIPB80N06S407ATMA2Contact-----2019-12-16T00:48:56Z
North Star MicroIPB80N06S407ATMA2Contact-----2015-05-20T05:52:12Z

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