- Mfr. #:
- IPD031N03L G
- Description:
- MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IPD031N03L G Information
OMO is experienced in sourcing hard-to-find and obsolete parts.
IPD031N03L G is available at OMO Electronic. Email us to get the quotation lead time and stock availability.
Specifications
| RoHS: | Y |
|---|---|
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Series: | OptiMOS 3 |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Brand: | Infineon Technologies |
| Manufacturer: | Infineon |
| Part # Aliases: | IPD031N03LGATMA1 IPD31N3LGXT SP000680554 |
| Channel Mode: | Enhancement |
| Pd - Power Dissipation: | 94 W |
| Id - Continuous Drain Current: | 90 A |
| Typical Turn-On Delay Time: | 9 ns |
| Length: | 6.5 mm |
| Width: | 6.22 mm |
| Rise Time: | 6 ns |
| Forward Transconductance - Min: | 50 S |
| Fall Time: | 5 ns |
| Typical Turn-Off Delay Time: | 34 ns |
| Qg - Gate Charge: | 33 nC |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Factory Pack Quantity: | 2500 |
| Vgs - Gate-Source Voltage: | 20 V |
| Rds On - Drain-Source Resistance: | 2.6 mOhms |
| Height: | 2.3 mm |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.139332 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
IPD031N03L G Price & Stock
RS Components IPD031N03L G pricing and available inventory.
AD5242BRUZ1M distributor
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Alternate Names
RS Components has several brands around the world that may have alternate names for IPD031N03L G due to regional differences or acquisition. IPD031N03L G may also be known as the following names: