IPN50R950CEATMA1 - Infineon Technologies

Mfr. #:
IPN50R950CEATMA1
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
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IPN50R950CEATMA1 Information

CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Specifications

RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-223-4
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPN50R950CE SP001461198
Channel Mode: Enhancement
Series: CoolMOS CE
Tradename: CoolMOS
Typical Turn-On Delay Time: 7 ns
Id - Continuous Drain Current: 6.6 A
Length: 6.5 mm
Vds - Drain-Source Breakdown Voltage: 500 V
Pd - Power Dissipation: 5 W
Rise Time: 4.9 ns
Factory Pack Quantity: 3000
Width: 3.5 mm
Typical Turn-Off Delay Time: 25 ns
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Rds On - Drain-Source Resistance: 2.22 Ohms
Fall Time: 19.5 ns
Qg - Gate Charge: 10.5 nC
Height: 1.6 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.003951 oz
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

IPN50R950CEATMA1 Price & Stock

Infineon IPN50R950CEATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPN50R950CEATMA1CT-ND2,7324.123.532.441.551.552020-02-13T17:17:23Z
Digi-KeyIPN50R950CEATMA1DKR-ND2,7324.123.532.441.551.552020-02-13T17:17:23Z
Digi-KeyIPN50R950CEATMA1TR-ND-----1.282020-02-13T17:17:23Z
RS Components 313009162,425--3.572.532.022020-02-14T14:31:38Z
RS Components1300916P2,425---2.532.022020-02-14T14:31:38Z
RS Components1685927-----1.462020-02-14T14:31:38Z
Mouser726-IPN50R950CEATMA15,7453.963.302.011.551.332020-02-14T21:44:59Z
element14 APAC26174562,4344.503.752.291.771.512020-02-14T02:25:53Z
Verical 2IPN50R950CEATMA1613--1.901.441.292020-02-14T18:03:40Z
VericalIPN50R950CEATMA115,000----1.472020-02-14T18:03:40Z
Arrow ElectronicsIPN50R950CEATMA16133.392.921.901.441.292020-02-14T16:23:31Z
Avnet 397Y1831-3.963.302.012.012.012020-02-14T03:49:04Z
AvnetIPN50R950CE-----1.252020-02-14T03:49:04Z
AvnetIPN50R950CEATMA1-----1.272020-02-14T03:49:04Z
Farnell 226174562,494-3.811.941.281.192020-02-12T03:13:57Z
Farnell2617456RL----1.281.192020-02-12T03:13:57Z
Newark97Y18312763.963.302.011.551.552020-02-07T03:53:04Z
Avnet EuropeSP001461198-----1.892020-02-14T08:27:31Z
LTL Group40479233,001-----2020-02-13T07:12:16Z
TMEIPN50R950CE--2.121.691.521.432020-02-14T10:41:01Z
Abacus TechnologiesIPN50R950CE20,328-----2019-12-06T00:07:36Z
Sierra ICIPN50R950CEATMA1Contact-----2019-12-16T00:48:56Z

AD5242BRUZ1M distributor

IPN50R950CEATMA1 Infineon Technologies | Mouser
Datasheet IPN50R950CE - Infineon Technologies
Apr 29, 2016
ipn50r950ceatma1 - Discrete Semiconductor Products - Digikey
IPN50R950CEATMA1 INFINEON TECHNOLOGIES | TME
Jun 17, 2021
IPN50R950CEATMA1 Infineon - MOSFETs - Distributors, Price ...Infineon IPN50R950CEATMA1 Datasheet - MOSFETs - Octopart
Infineon - Power MOSFET, N Channel, 500 V Farnell Ireland
N-Channel MOSFET, 6.6 A, 550 V, 3 + Tab-Pin SOT-223 ...N-Channel MOSFET, 6.6 A, 550 V, 3 + Tab-Pin SOT-223 ...

Alternate Names

Infineon has several brands around the world that may have alternate names for IPN50R950CEATMA1 due to regional differences or acquisition. IPN50R950CEATMA1 may also be known as the following names:

  • Infineon Technologies IPN50R950CEATMA1
  • INF IPN50R950CEATMA1
  • INFIN IPN50R950CEATMA1
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  • INFINEON TECH IPN50R950CEATMA1
  • INFINEN IPN50R950CEATMA1
  • IFT IPN50R950CEATMA1
  • IFX IPN50R950CEATMA1
  • INFN IPN50R950CEATMA1
  • INFINEON/SIEMENS IPN50R950CEATMA1
  • INFINEON TECHNO IPN50R950CEATMA1
  • IR/Infineon IPN50R950CEATMA1
  • INFINEON TECHNOLOGIES (ASIA IPN50R950CEATMA1
  • INFINEON TECHNOLOGIE IPN50R950CEATMA1
  • INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD IPN50R950CEATMA1
  • INFINEON TECH ICs IPN50R950CEATMA1
  • INFINEON/PBF IPN50R950CEATMA1
  • INFINEON TEC IPN50R950CEATMA1
  • InfineonPb IPN50R950CEATMA1