- Mfr. #:
- IXFN520N075T2
- Description:
- MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFN520N075T2 Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
- GigaMOS™ TrenchT2™ Power MOSFETs
- IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tube |
Type: | TrenchT2 GigaMOS HiperFet |
Configuration: | Single |
Technology: | Si |
Package / Case: | SOT-227-4 |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Brand: | IXYS |
Manufacturer: | IXYS |
Series: | IXFN520N075 |
Tradename: | HiPerFET |
Channel Mode: | Enhancement |
Mounting Style: | Chassis Mount |
Pd - Power Dissipation: | 940 W |
Typical Turn-Off Delay Time: | 80 ns |
Vds - Drain-Source Breakdown Voltage: | 75 V |
Forward Transconductance - Min: | 65 S |
Qg - Gate Charge: | 545 nC |
Id - Continuous Drain Current: | 480 A |
Typical Turn-On Delay Time: | 48 ns |
Rise Time: | 36 ns |
Fall Time: | 35 ns |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Vgs - Gate-Source Voltage: | 10 V |
Factory Pack Quantity: | 10 |
Rds On - Drain-Source Resistance: | 1.9 mOhms |
Unit Weight: | 1.058219 oz |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
IXFN520N075T2 Price & Stock
IXYS IXFN520N075T2 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXFN520N075T2-ND | 332 | 162.64 | 150.02 | 126.42 | 107.88 | 107.88 | 2020-01-03T13:53:44Z |
Mouser | 747-IXFN520N075T2 | 1,075 | 168.57 | 155.89 | 133.11 | 133.11 | 133.11 | 2020-01-03T21:32:22Z |
TME | IXFN520N075T2 | - | 176.45 | 140.69 | 140.69 | 140.69 | 140.69 | 2020-01-03T10:10:35Z |
Au Ling | IXFN520N075T2 | Contact | - | - | - | - | - | 2019-11-27T14:34:02Z |
North Star Micro | IXFN520N075T2 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Sierra IC | IXFN520N075T2 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- IXFN520N075T2 IXYS - Mouser Electronics
- IXFN520N075T2 IXYS | Discrete Semiconductor Products
- IXFN520N075T2 - N Channel Trench Gate Discrete MOSFETs
- IXFN520N075T2 - ozdisan
- IXFN520N075T2 in Tube by IXYS | Mosfets - Future Electronics
- IXFN520N075T2 IXYS | Distributors, Price Comparison, and ...
- IXFN520N075T2 by Littelfuse | MOSFETs | Arrow.com
- IXFN520N075T2 IXYS - Module | single transistor; 75V
- Oct 15, 2020
- IXFN520N075T2 MOSFET. Datasheet pdf. Equivalent
- MOSFET, N-channel, 75 V, 480 A, 940 W, 0.0019 R, SOT227B
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFN520N075T2 due to regional differences or acquisition. IXFN520N075T2 may also be known as the following names:
- IXYS CORPORATION IXFN520N075T2
- IXY IXFN520N075T2
- IXYS CORP IXFN520N075T2
- IXYS SEMICONDUCTOR IXFN520N075T2
- IXYS Integrated Circuits Division IXFN520N075T2
- IXYS Integrated Circuits/Clare IXFN520N075T2
- IXYS GMBH IXFN520N075T2
- IXYS-DIRECTED ENERGY IXFN520N075T2
- IXYS Integrated Circuits Division Inc IXFN520N075T2
- IXYS SEMICONDUCTOR GMBH IXFN520N075T2
- IXYS (VA) IXFN520N075T2
- IXYS CORPO IXFN520N075T2
- IXYS Semiconducter GmbH IXFN520N075T2
- IXYS SEMICONDUCTOR CORP IXFN520N075T2
- IXYS INTEGCIRCUITS DIV(CLARE) IXFN520N075T2
- IXYS Colorado (IXYS RF Division) IXFN520N075T2
- IXYS SEMICOND IXFN520N075T2
- IXYS Integrated Circuits IXFN520N075T2
- Zilog/IXYS IXFN520N075T2
- IXYSCOR IXFN520N075T2
- Clare/LXYS Corporation IXFN520N075T2
- IXYS-RF IXFN520N075T2
- CP CLAIRE IXFN520N075T2
- Clare (IXYS) IXFN520N075T2
- IXYS CORPORATION|V IXFN520N075T2