SIHU4N80E-GE3 - Vishay / Siliconix

Mfr. #:
SIHU4N80E-GE3
Description:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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SIHU4N80E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-251-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Vds - Drain-Source Breakdown Voltage: 800 V
Factory Pack Quantity: 75
Rise Time: 7 ns
Pd - Power Dissipation: 69 W
Id - Continuous Drain Current: 4.3 A
Typical Turn-Off Delay Time: 26 ns
Fall Time: 20 ns
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 16 nC
Typical Turn-On Delay Time: 12 ns
Vgs - Gate-Source Voltage: 10 V
Forward Transconductance - Min: 1.5 S
Rds On - Drain-Source Resistance: 1.1 Ohms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHU4N80E-GE3 Price & Stock

Vishay SIHU4N80E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser78-SIHU4N80E-GE32,96313.1911.139.227.096.032020-03-20T21:39:50Z
element14 APAC29329373,00013.6111.499.527.326.132020-03-21T02:36:24Z
Digi-KeySIHU4N80E-GE3-ND-13.1911.848.716.265.722020-03-23T13:03:11Z
AvnetSIHU4N80E-GE3-----6.352020-03-21T01:42:32Z
Farnell29329373,00012.499.867.275.655.162020-03-21T01:51:18Z
Newark78AC65263,00013.1911.139.227.096.032020-03-23T03:18:30Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHU4N80E-GE3 due to regional differences or acquisition. SIHU4N80E-GE3 may also be known as the following names:

  • VIS SIHU4N80E-GE3
  • VISH SIHU4N80E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHU4N80E-GE3
  • VISHA SIHU4N80E-GE3
  • VISHAY THIN FILM SIHU4N80E-GE3
  • VISHAY INTERTECHNOLOGY SIHU4N80E-GE3
  • VISHY SIHU4N80E-GE3
  • VISAHY SIHU4N80E-GE3
  • VISH/IR SIHU4N80E-GE3
  • VSHY SIHU4N80E-GE3
  • VSH SIHU4N80E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHU4N80E-GE3
  • VISHAY ELECTRONIC SIHU4N80E-GE3
  • VSHAY SIHU4N80E-GE3
  • VISHAY FOIL RESISTORS SIHU4N80E-GE3
  • VISHAY AMERICAS INC SIHU4N80E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHU4N80E-GE3
  • VISHAY AMERICAS SIHU4N80E-GE3
  • VISHAY ELECTRO-FILMS SIHU4N80E-GE3
  • VISHAY COMPONENTS SIHU4N80E-GE3
  • Vishay Semiconductors SIHU4N80E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHU4N80E-GE3
  • VISHAY INTERTEC SIHU4N80E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHU4N80E-GE3
  • VISHAY OPTO SIHU4N80E-GE3
  • Vishay Intertechnology Inc. SIHU4N80E-GE3