IPW60R017C7XKSA1 - Infineon Technologies

Mfr. #:
IPW60R017C7XKSA1
Description:
MOSFET
Lifecycle:
New from this manufacturer.
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IPW60R017C7XKSA1 Information

CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPW60R017C7 SP001313542
Channel Mode: Enhancement
Series: CoolMOS C7
Tradename: CoolMOS
Vds - Drain-Source Breakdown Voltage: 600 V
Width: 5.21 mm
Pd - Power Dissipation: 446 W
Fall Time: 4 ns
Typical Turn-On Delay Time: 30 ns
Vgs th - Gate-Source Threshold Voltage: 3 V
Rise Time: 25 ns
Qg - Gate Charge: 240 nC
Factory Pack Quantity: 240
Height: 21.1 mm
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 17 mOhms
Length: 16.13 mm
Id - Continuous Drain Current: 109 A
Typical Turn-Off Delay Time: 106 ns
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IPW60R017C7XKSA1 Price & Stock

Infineon IPW60R017C7XKSA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser726-IPW60R017C7XKSA1298138.48127.71109.07109.07109.072020-04-20T23:20:42Z
element14 APAC28394741,733142.88131.76112.53107.34107.342020-04-15T02:31:35Z
Chip One Stop JapanC1S3220006900974164.98164.98164.98164.98164.982020-04-21T12:56:03Z
VericalIPW60R017C7XKSA14191.35191.35191.35191.35191.352020-04-21T18:08:54Z
Digi-KeyIPW60R017C7XKSA1-ND----107.65107.652020-04-21T13:01:01Z
AvnetIPW60R017C7XKSA1----97.6091.862020-04-18T01:18:00Z
Farnell2839474951135.73119.62102.19102.02102.022020-04-16T14:12:22Z
Newark49AC03061,051151.45140.89122.68117.72117.722020-04-15T03:18:12Z
Avnet EuropeSP001313542-118.03108.3092.7492.7492.742020-04-21T07:39:52Z
NAC SemiXSKDRABS003451316--132.74132.74132.742020-04-20T17:35:27Z
Classic ComponentsIPW60R017C7XKSA146-----2020-04-17T15:46:26Z

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Datasheet IPW60R017C7 - Infineon Technologies
Mar 1, 2016
Infineon Technologies AG IPW60R017C7XKSA1 MOSFETs
IPW60R017C7XKSA1 by Infineon MOSFETs | Avnet Europe
Infineon - Power MOSFET, N Channel, 600 V - Newark
N-Channel MOSFET, 109 A, 600 V, 3-Pin TO-247 ... - Radionics
IPW60R017C7 Price & Stock - DigiPart
N-Channel MOSFET, 109 A, 600 V, 3-Pin TO-247 Infineon ...

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