SIHU6N62E-GE3 - Vishay / Siliconix

Mfr. #:
SIHU6N62E-GE3
Description:
MOSFET 620V Vds 30V Vgs IPAK (TO-251)
Lifecycle:
New from this manufacturer.
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Payment
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SIHU6N62E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-251-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Rds On - Drain-Source Resistance: 900 mOhms
Pd - Power Dissipation: 78 W
Factory Pack Quantity: 75
Vds - Drain-Source Breakdown Voltage: 620 V
Length: 6.73 mm
Height: 6.22 mm
Id - Continuous Drain Current: 6 A
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 30 V
Typical Turn-Off Delay Time: 22 ns
Width: 2.39 mm
Qg - Gate Charge: 17 nC
Fall Time: 16 ns
Typical Turn-On Delay Time: 12 ns
Rise Time: 10 ns
Number of Channels: 1 Channel
Unit Weight: 0.011640 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHU6N62E-GE3 Price & Stock

Vishay SIHU6N62E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHU6N62E-GE3-ND2,98012.2911.007.835.414.852019-12-07T13:49:44Z
Mouser78-SIHU6N62E-GE32,99512.2910.418.385.925.452019-12-06T22:54:47Z
AvnetSIHU6N62E-GE3-----5.272019-12-07T01:49:54Z
TTISIHU6N62E-GE3------2019-12-07T08:23:26Z
Avnet EuropeSIHU6N62E-GE3-6.236.055.495.495.492019-12-07T08:07:29Z
SourceabilitySIHU6N62E-GE36,000-----2019-11-26T18:50:02Z
LTL Group4285423------2019-12-06T09:29:21Z
Component ElectronicsSIHU6N62E-GE315012.0512.0512.0512.0512.052019-11-26T21:24:43Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHU6N62E-GE3 due to regional differences or acquisition. SIHU6N62E-GE3 may also be known as the following names:

  • VIS SIHU6N62E-GE3
  • VISH SIHU6N62E-GE3
  • VISHAY INTERTECHNOLOGY INC SIHU6N62E-GE3
  • VISHA SIHU6N62E-GE3
  • VISHAY THIN FILM SIHU6N62E-GE3
  • VISHAY INTERTECHNOLOGY SIHU6N62E-GE3
  • VISHY SIHU6N62E-GE3
  • VISAHY SIHU6N62E-GE3
  • VISH/IR SIHU6N62E-GE3
  • VSHY SIHU6N62E-GE3
  • VSH SIHU6N62E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHU6N62E-GE3
  • VISHAY ELECTRONIC SIHU6N62E-GE3
  • VSHAY SIHU6N62E-GE3
  • VISHAY FOIL RESISTORS SIHU6N62E-GE3
  • VISHAY AMERICAS INC SIHU6N62E-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHU6N62E-GE3
  • VISHAY AMERICAS SIHU6N62E-GE3
  • VISHAY ELECTRO-FILMS SIHU6N62E-GE3
  • VISHAY COMPONENTS SIHU6N62E-GE3
  • Vishay Semiconductors SIHU6N62E-GE3
  • VISHAY COMPONENTS NEDERLAND SIHU6N62E-GE3
  • VISHAY INTERTEC SIHU6N62E-GE3
  • VISHAY FOIL RESISTORS / VPG SIHU6N62E-GE3
  • VISHAY OPTO SIHU6N62E-GE3
  • Vishay Intertechnology Inc. SIHU6N62E-GE3