Mfr. #:
CGHV96050F1
Description:
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
Lifecycle:
New from this manufacturer.
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CGHV96050F1 Information

GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Subcategory: Transistors
Configuration: Single Triple Drain
Mounting Style: SMD/SMT
Packaging: Reel
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Development Kit: QPD1013EVB01
Transistor Polarity: N-Channel
Application: Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
Transistor Type: HEMT
Technology: GaN SiC
Package / Case: DFN-6
Pd - Power Dissipation: 67 W
Maximum Drain Gate Voltage: 65 V
Gain: 21.8 dB
Output Power: 178 W
Factory Pack Quantity: 100
Id - Continuous Drain Current: 1.7 A
Operating Frequency: 1.2 GHz to 2.7 GHz
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C

CGHV96050F1 Price & Stock

Cree CGHV96050F1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser941-CGHV96050F1503122.763122.763122.763122.763122.762019-10-30T13:07:15Z
NexxonCGHV96050F1Contact-----2018-02-27T00:44:39Z

AD5242BRUZ1M distributor

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Alternate Names

Cree has several brands around the world that may have alternate names for CGHV96050F1 due to regional differences or acquisition. CGHV96050F1 may also be known as the following names:

  • CREE INC CGHV96050F1
  • CREE INCORPORATED CGHV96050F1
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  • CREE INC (VA) CGHV96050F1
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  • Cree Microwave CGHV96050F1
  • CREE(RoHS) CGHV96050F1
  • CREE/M CGHV96050F1
  • CREE POWER CGHV96050F1
  • Cree Inc. CGHV96050F1