- Mfr. #:
- IPD60R650CEATMA1
- Description:
- MOSFET N-Ch 600V 7A DPAK-2
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IPD60R650CEATMA1 Information
Images are for reference only. Mfr. #: IPD60R650CEATMA1 is in stock.
See Product Specifications for more details.
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Specifications
RoHS: | Y |
---|---|
Package / Case: | TO-252-3 |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Brand: | Infineon Technologies |
Manufacturer: | Infineon |
Part # Aliases: | IPD60R650CEATMA1 SP001276026 |
Channel Mode: | Enhancement |
Tradename: | CoolMOS |
Rise Time: | 8 ns |
Id - Continuous Drain Current: | 7 A |
Rds On - Drain-Source Resistance: | 650 mOhms |
Pd - Power Dissipation: | 63 W |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Length: | 6.5 mm |
Width: | 6.22 mm |
Typical Turn-Off Delay Time: | 58 ns |
Factory Pack Quantity: | 2500 |
Qg - Gate Charge: | 20.5 nC |
Vgs - Gate-Source Voltage: | 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Height: | 2.3 mm |
Fall Time: | 11 ns |
Typical Turn-On Delay Time: | 10 ns |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Unit Weight: | 0.139332 oz |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
IPD60R650CEATMA1 Price & Stock
Infineon IPD60R650CEATMA1 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
LTL Group | 4047516 | 2,500 | - | - | - | - | - | 2020-03-11T00:43:02Z |
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Alternate Names
Infineon has several brands around the world that may have alternate names for IPD60R650CEATMA1 due to regional differences or acquisition. IPD60R650CEATMA1 may also be known as the following names:
- Infineon Technologies IPD60R650CEATMA1
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