- Mfr. #:
- IXFH35N30
- Description:
- MOSFET 300V 35A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH35N30 Information
- HiPerFET™ Power MOSFETs
- IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXFH35N30 |
| Tradename: | HyperFET |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 75 ns |
| Rise Time: | 60 ns |
| Width: | 5.3 mm |
| Fall Time: | 45 ns |
| Id - Continuous Drain Current: | 35 A |
| Pd - Power Dissipation: | 300 W |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Factory Pack Quantity: | 30 |
| Forward Transconductance - Min: | 25 S |
| Height: | 21.46 mm |
| Typical Turn-On Delay Time: | 20 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Length: | 16.26 mm |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.229281 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXFH35N30 Price & Stock
IXYS IXFH35N30 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| NetroFlash | IXFH35N30 | 1,835 | - | - | - | - | - | 2020-03-02T23:12:20Z |
| Resion | IXFH35N30 | 4 | - | - | - | - | - | 2019-04-10T15:52:26Z |
| Classic Components | IXFH35N30 | 2 | - | - | - | - | - | 2020-03-11T22:08:19Z |
| Dana Microsystems | IXFH35N30 | 1,683 | - | - | - | - | - | 2020-03-11T20:03:08Z |
| Nexxon | IXFH35N30 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
| North Star Micro | IXFH35N30 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
| TransparentC | IXFH35N30 | Contact | - | - | - | - | - | 2016-01-28T17:08:50Z |
AD5242BRUZ1M distributor
- IXFH35N30 IXYS - Mouser Electronics
- IXFH35N30 IXYS | Discrete Semiconductor Products | DigiKey
- IXFH35N30 IXYS | Distributors, Price Comparison ... - Octopart
- HiPerFETTM Power MOSFETs
- IXFH35N30 Datasheet, Equivalent, Power MOSFET.
- IXFH35N30 MOSFET. Datasheet pdf. Equivalent
- IXFH35N30 by IXYS | MOSFETs | Arrow.com
- IXFH35N30 Datasheet(PDF) - IXYS Corporation
- IXFH35N30 IXYS | unipolar; 300V; 35A; 298W; TO247-3 | TME
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH35N30 due to regional differences or acquisition. IXFH35N30 may also be known as the following names:
- IXYS CORPORATION IXFH35N30
- IXY IXFH35N30
- IXYS CORP IXFH35N30
- IXYS SEMICONDUCTOR IXFH35N30
- IXYS Integrated Circuits Division IXFH35N30
- IXYS Integrated Circuits/Clare IXFH35N30
- IXYS GMBH IXFH35N30
- IXYS-DIRECTED ENERGY IXFH35N30
- IXYS Integrated Circuits Division Inc IXFH35N30
- IXYS SEMICONDUCTOR GMBH IXFH35N30
- IXYS (VA) IXFH35N30
- IXYS CORPO IXFH35N30
- IXYS Semiconducter GmbH IXFH35N30
- IXYS SEMICONDUCTOR CORP IXFH35N30
- IXYS INTEGCIRCUITS DIV(CLARE) IXFH35N30
- IXYS Colorado (IXYS RF Division) IXFH35N30
- IXYS SEMICOND IXFH35N30
- IXYS Integrated Circuits IXFH35N30
- Zilog/IXYS IXFH35N30
- IXYSCOR IXFH35N30
- Clare/LXYS Corporation IXFH35N30
- IXYS-RF IXFH35N30
- CP CLAIRE IXFH35N30
- Clare (IXYS) IXFH35N30
- IXYS CORPORATION|V IXFH35N30