IXFR24N90P - IXYS

Mfr. #:
IXFR24N90P
Description:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lifecycle:
New from this manufacturer.
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IXFR24N90P Information

900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Technology: Si
Type: Polar Power MOSFET
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: IXYS
Manufacturer: IXYS
Series: IXFR24N90
Tradename: HiPerFET
Vds - Drain-Source Breakdown Voltage: 900 V
Typical Turn-Off Delay Time: 68 ns
Qg - Gate Charge: 58 nC
Rds On - Drain-Source Resistance: 460 mOhms
Typical Turn-On Delay Time: 46 ns
Rise Time: 40 ns
Fall Time: 38 ns
Vgs - Gate-Source Voltage: 30 V
Factory Pack Quantity: 30
Pd - Power Dissipation: 230 W
Forward Transconductance - Min: 16 S / 10 S
Id - Continuous Drain Current: 13 A
Unit Weight: 0.186952 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFR24N90P Price & Stock

IXYS IXFR24N90P pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXFR24N90P-ND---74.2474.2474.242020-02-04T16:06:00Z
Mouser747-IXFR24N90P-84.2577.4565.4162.2662.262020-02-03T23:00:00Z
TMEIXFR24N90P-82.9965.7659.1159.1159.112020-02-04T10:21:18Z
North Star MicroIXFR24N90PContact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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Alternate Names

IXYS has several brands around the world that may have alternate names for IXFR24N90P due to regional differences or acquisition. IXFR24N90P may also be known as the following names:

  • IXYS CORPORATION IXFR24N90P
  • IXY IXFR24N90P
  • IXYS CORP IXFR24N90P
  • IXYS SEMICONDUCTOR IXFR24N90P
  • IXYS Integrated Circuits Division IXFR24N90P
  • IXYS Integrated Circuits/Clare IXFR24N90P
  • IXYS GMBH IXFR24N90P
  • IXYS-DIRECTED ENERGY IXFR24N90P
  • IXYS Integrated Circuits Division Inc IXFR24N90P
  • IXYS SEMICONDUCTOR GMBH IXFR24N90P
  • IXYS (VA) IXFR24N90P
  • IXYS CORPO IXFR24N90P
  • IXYS Semiconducter GmbH IXFR24N90P
  • IXYS SEMICONDUCTOR CORP IXFR24N90P
  • IXYS INTEGCIRCUITS DIV(CLARE) IXFR24N90P
  • IXYS Colorado (IXYS RF Division) IXFR24N90P
  • IXYS SEMICOND IXFR24N90P
  • IXYS Integrated Circuits IXFR24N90P
  • Zilog/IXYS IXFR24N90P
  • IXYSCOR IXFR24N90P
  • Clare/LXYS Corporation IXFR24N90P
  • IXYS-RF IXFR24N90P
  • CP CLAIRE IXFR24N90P
  • Clare (IXYS) IXFR24N90P
  • IXYS CORPORATION|V IXFR24N90P