Mfr. #:
SIE806DF-T1-E3
Description:
RF Bipolar Transistors MOSFET 30V 60A 125W 1.7mohm @ 10V
Lifecycle:
New from this manufacturer.
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SIE806DF-T1-E3 Information

Part No. SIE806DF-T1-E3 is now available at OMO. Request a quote of SIE806DF-T1-E3 please use the request quote or email us a RFQ.

Specifications

Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Configuration Single
Technology Si
Mounting-Style SMD/SMT
Part-Aliases SIE806DF-E3
Packaging Reel
Package-Case PolarPAK-10
Transistor-Polarity N-Channel
Channel-Mode Enhancement
Typical-Turn-Off-Delay-Time 85 ns
Pd-Power-Dissipation 5.2 W
Id-Continuous-Drain-Current 41.3 A
Vds-Drain-Source-Breakdown-Voltage 30 V
Rise-Time 160 ns 50 ns
Fall-Time 15 ns 10 ns
Typical-Turn-On-Delay-Time 125 ns 20 ns
Vgs-Gate-Source-Voltage 12 V
Rds-On-Drain-Source-Resistance 1.7 mOhms
Transistor-Type 1 N-Channel
Number-of-Channels 1 Channel
Minimum-Operating-Temperature - 55 C
Maximum-Operating-Temperature + 150 C

SIE806DF-T1-E3 Price & Stock

Vishay SIE806DF-T1-E3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
element14 APAC1497640-18.7216.7514.1412.8312.832020-03-04T14:46:49Z
LTL Group4285178167-----2020-03-04T05:52:29Z
SPECSIE806DF-T1-E3138-----2020-02-26T16:02:45Z
Classic ComponentsSIE806DF-T1-E3106-----2020-02-28T00:54:13Z
North Star MicroSIE806DF-T1-E3Contact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIE806DF-T1-E3 due to regional differences or acquisition. SIE806DF-T1-E3 may also be known as the following names:

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