SIHB22N60E-E3 - Vishay / Siliconix

Mfr. #:
SIHB22N60E-E3
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery
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SIHB22N60E-E3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Typical Turn-Off Delay Time: 66 ns
Vds - Drain-Source Breakdown Voltage: 650 V
Qg - Gate Charge: 57 nC
Vgs th - Gate-Source Threshold Voltage: 4 V
Fall Time: 35 ns
Vgs - Gate-Source Voltage: 30 V
Rise Time: 27 ns
Pd - Power Dissipation: 227 W
Id - Continuous Drain Current: 21 A
Rds On - Drain-Source Resistance: 180 mOhms
Typical Turn-On Delay Time: 18 ns
Factory Pack Quantity: 1000
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB22N60E-E3 Price & Stock

Vishay SIHB22N60E-E3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB22N60E-E3-ND36827.1924.4318.4814.0712.632020-01-23T23:05:36Z
Mouser781-SIHB22N60E-E32,02528.5123.9320.1914.3614.362020-01-28T02:24:59Z
AvnetSIHB22N60E-E3----14.9413.162020-01-28T03:45:07Z
North Star MicroSIHB22N60E-E3Contact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB22N60E-E3 due to regional differences or acquisition. SIHB22N60E-E3 may also be known as the following names:

  • VIS SIHB22N60E-E3
  • VISH SIHB22N60E-E3
  • VISHAY INTERTECHNOLOGY INC SIHB22N60E-E3
  • VISHA SIHB22N60E-E3
  • VISHAY THIN FILM SIHB22N60E-E3
  • VISHAY INTERTECHNOLOGY SIHB22N60E-E3
  • VISHY SIHB22N60E-E3
  • VISAHY SIHB22N60E-E3
  • VISH/IR SIHB22N60E-E3
  • VSHY SIHB22N60E-E3
  • VSH SIHB22N60E-E3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHB22N60E-E3
  • VISHAY ELECTRONIC SIHB22N60E-E3
  • VSHAY SIHB22N60E-E3
  • VISHAY FOIL RESISTORS SIHB22N60E-E3
  • VISHAY AMERICAS INC SIHB22N60E-E3
  • VISHAY INTERTECHNOLOGY ASIA PT SIHB22N60E-E3
  • VISHAY AMERICAS SIHB22N60E-E3
  • VISHAY ELECTRO-FILMS SIHB22N60E-E3
  • VISHAY COMPONENTS SIHB22N60E-E3
  • Vishay Semiconductors SIHB22N60E-E3
  • VISHAY COMPONENTS NEDERLAND SIHB22N60E-E3
  • VISHAY INTERTEC SIHB22N60E-E3
  • VISHAY FOIL RESISTORS / VPG SIHB22N60E-E3
  • VISHAY OPTO SIHB22N60E-E3
  • Vishay Intertechnology Inc. SIHB22N60E-E3