- Mfr. #:
- SIHH11N65E-T1-GE3
- Description:
- MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHH11N65E-T1-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Package / Case: | PowerPAK-8x8-4 |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Series: | E |
Length: | 8 mm |
Width: | 8 mm |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Typical Turn-Off Delay Time: | 39 ns |
Qg - Gate Charge: | 34 nC |
Rds On - Drain-Source Resistance: | 316 mOhms |
Factory Pack Quantity: | 3000 |
Vgs - Gate-Source Voltage: | 30 V |
Rise Time: | 28 ns |
Fall Time: | 23 ns |
Typical Turn-On Delay Time: | 19 ns |
Pd - Power Dissipation: | 130 W |
Id - Continuous Drain Current: | 12 A |
Height: | 1 mm |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHH11N65E-T1-GE3 Price & Stock
Vishay SIHH11N65E-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIHH11N65E-T1-GE3CT-ND | 50 | 29.96 | 26.90 | 25.43 | 25.43 | 25.43 | 2020-03-01T13:58:12Z |
Digi-Key | SIHH11N65E-T1-GE3TR-ND | - | - | - | - | - | 14.82 | 2020-03-01T13:58:12Z |
Avnet | SIHH11N65E-T1-GE3 | 6,000 | - | - | - | - | 15.50 | 2020-02-29T04:03:43Z |
Verical | SIHH11N65E-T1-GE3 | 3,000 | - | 3.78 | 3.78 | 3.78 | 3.78 | 2020-03-01T18:03:00Z |
Arrow Electronics | SIHH11N65E-T1-GE3 | 3,000 | 3.78 | 3.78 | 3.78 | 3.78 | 3.78 | 2020-03-01T16:42:21Z |
Avnet Europe | SIHH11N65E-T1-GE3 | 50 | - | - | - | - | 18.75 | 2020-03-02T07:43:45Z |
Ameya360 | SIHH11N65E-T1-GE3 | 50 | 18.14 | 18.14 | 18.14 | 18.14 | 18.14 | 2020-02-28T06:24:20Z |
NAC Semi | XSKDRABV0041563 | 2,400 | - | - | 21.77 | 21.77 | 20.30 | 2020-02-27T20:05:38Z |
LTL Group | 4285347 | 51 | - | - | - | - | - | 2020-03-02T01:51:57Z |
Component Electronics | SIHH11N65E-T1-GE3 | 307 | 26.92 | 26.92 | 26.92 | 26.92 | 26.92 | 2020-02-17T17:34:31Z |
Classic Components | SIHH11N65E-T1-GE3 | 2,310 | - | - | - | - | - | 2020-02-28T00:54:13Z |
AD5242BRUZ1M distributor
- SIHH11N65E-T1-GE3 Vishay Siliconix - Digikey
- SIHH11N65E-T1-GE3 Vishay / Siliconix - Mouser Electronics
- SIHH11N65E-T1-GE3 by Vishay | MOSFETs | Arrow.com
- SIHH11N65E-T1-GE3 by Vishay MOSFETs | Avnet
- SiHH11N65E E Series Power MOSFET - Vishay
- Mar 21, 2016
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHH11N65E-T1-GE3 due to regional differences or acquisition. SIHH11N65E-T1-GE3 may also be known as the following names:
- VIS SIHH11N65E-T1-GE3
- VISH SIHH11N65E-T1-GE3
- VISHAY INTERTECHNOLOGY INC SIHH11N65E-T1-GE3
- VISHA SIHH11N65E-T1-GE3
- VISHAY THIN FILM SIHH11N65E-T1-GE3
- VISHAY INTERTECHNOLOGY SIHH11N65E-T1-GE3
- VISHY SIHH11N65E-T1-GE3
- VISAHY SIHH11N65E-T1-GE3
- VISH/IR SIHH11N65E-T1-GE3
- VSHY SIHH11N65E-T1-GE3
- VSH SIHH11N65E-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHH11N65E-T1-GE3
- VISHAY ELECTRONIC SIHH11N65E-T1-GE3
- VSHAY SIHH11N65E-T1-GE3
- VISHAY FOIL RESISTORS SIHH11N65E-T1-GE3
- VISHAY AMERICAS INC SIHH11N65E-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SIHH11N65E-T1-GE3
- VISHAY AMERICAS SIHH11N65E-T1-GE3
- VISHAY ELECTRO-FILMS SIHH11N65E-T1-GE3
- VISHAY COMPONENTS SIHH11N65E-T1-GE3
- Vishay Semiconductors SIHH11N65E-T1-GE3
- VISHAY COMPONENTS NEDERLAND SIHH11N65E-T1-GE3
- VISHAY INTERTEC SIHH11N65E-T1-GE3
- VISHAY FOIL RESISTORS / VPG SIHH11N65E-T1-GE3
- VISHAY OPTO SIHH11N65E-T1-GE3
- Vishay Intertechnology Inc. SIHH11N65E-T1-GE3