- Mfr. #:
- QPD1010
- Description:
- RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
QPD1010 Information
- QPD1009 & QPD1010 GaN RF Transistors
- Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
- QPD GaN RF Transistors
- Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
- GaN Transistor Solutions for Sub 6GHz 5G
- Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Specifications
Moisture Sensitive: | Yes |
---|---|
RoHS: | Y |
Packaging: | Waffle |
Subcategory: | Transistors |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Product Type: | RF JFET Transistors |
Product Category: | RF JFET Transistors |
Manufacturer: | Qorvo |
Brand: | Qorvo |
Development Kit: | QPD1010-EVB1 |
Series: | QPD |
Package / Case: | QFN-16 |
Transistor Polarity: | N-Channel |
Transistor Type: | HEMT |
Technology: | GaN SiC |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Factory Pack Quantity: | 50 |
Id - Continuous Drain Current: | 400 mA |
Operating Frequency: | 4 GHz |
Gain: | 24.7 dB |
Vgs - Gate-Source Breakdown Voltage: | 145 V |
Pd - Power Dissipation: | 13.5 W |
Part # Aliases: | 1132873 |
Output Power: | 11 W |
Unit Weight: | 0.081130 oz |
Operating Temperature Range: | - 40 C to + 85 C |
Minimum Operating Temperature: | - 40 C |
Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
Maximum Operating Temperature: | + 85 C |
QPD1010 Price & Stock
Qorvo QPD1010 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Mouser | 772-QPD1010 | 77 | 29.36 | 29.36 | 21.96 | 19.00 | 19.00 | 2020-03-17T00:28:55Z |
RFMW | QPD1010 | 66 | 29.36 | 29.36 | 21.96 | 19.00 | 19.00 | 2020-03-17T08:38:18Z |
AD5242BRUZ1M distributor
- QPD1010QPD1010
- QPD1010 Qorvo
- QPD1010 Qorvo RF Power Transistor
- QPD1010 - Qorvo | RF Transistor
- QPD1010
- DC 4 GHz GaN RF Transistors QPD1009 And QPD1010
- Guerrilla RF - GRF5040
- Two GaN on SiC RF Transistors: QPD1009 and QPD1010
- Jan 12, 2017
Alternate Names
Qorvo has several brands around the world that may have alternate names for QPD1010 due to regional differences or acquisition. QPD1010 may also be known as the following names:
- QORVO INC QPD1010
- Qorvo / TriQuint Semiconductor QPD1010