- Mfr. #:
- CSD25213W10
- Description:
- MOSFET P-CH NexFET Pwr MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CSD25213W10 Information
- NexFET P-Channel Power MOSFETs
- Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
- TI P-Channel MOSFETs - 8-23-12
- NexFET™ Power MOSFETs
- Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Specifications
RoHS: | Y |
---|---|
Manufacturer: | Texas Instruments |
Brand: | Texas Instruments |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Transistor Polarity: | P-Channel |
Tradename: | NexFET |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Channel Mode: | Enhancement |
Package / Case: | DSBGA-4 |
Series: | CSD25213W10 |
Fall Time: | 970 ns |
Vgs th - Gate-Source Threshold Voltage: | 850 mV |
Rds On - Drain-Source Resistance: | 67 mOhms |
Vgs - Gate-Source Voltage: | 6 V |
Rise Time: | 520 ns |
Typical Turn-On Delay Time: | 510 ns |
Factory Pack Quantity: | 3000 |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Qg - Gate Charge: | 2.2 nC |
Id - Continuous Drain Current: | 1.6 A |
Typical Turn-Off Delay Time: | 1 us |
Length: | 1 mm |
Width: | 1 mm |
Pd - Power Dissipation: | 1 W |
Transistor Type: | 1 P-Channel |
Number of Channels: | 1 Channel |
Height: | 0.62 mm |
Unit Weight: | 0.000039 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
CSD25213W10 Price & Stock
Texas Instruments CSD25213W10 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | 296-40004-1-ND | 17,650 | 3.22 | 2.61 | 1.50 | 0.945 | 0.945 | 2019-12-22T13:56:25Z |
Digi-Key | 296-40004-6-ND | 17,650 | 3.22 | 2.61 | 1.50 | 0.945 | 0.945 | 2019-12-22T13:56:25Z |
Digi-Key | 296-40004-2-ND | 15,000 | - | - | - | - | 0.809 | 2019-12-22T13:56:25Z |
Texas Instruments | CSD25213W10 | 39,060 | 1.61 | 1.47 | 1.12 | 0.631 | 0.631 | 2019-12-22T02:03:12Z |
Mouser | 595-CSD25213W10 | 8,755 | 3.15 | 2.38 | 1.30 | 0.974 | 0.785 | 2019-12-12T16:21:14Z |
Arrow Electronics | CSD25213W10 | 30,000 | - | - | - | - | 0.720 | 2019-12-22T15:38:43Z |
Avnet | CSD25213W10 | - | - | - | - | - | 0.805 | 2019-12-21T03:35:55Z |
Avnet Europe | CSD25213W10 | - | - | - | - | - | 1.01 | 2019-12-22T07:36:27Z |
J2 Sourcing | CSD25213W10 | 2,989 | - | - | - | - | - | 2019-12-13T09:52:53Z |
Antdic Electronics | CSD25213W10 | 15,368 | - | - | - | - | - | 2019-11-10T13:01:33Z |
LTL Group | 3933963 | 186 | - | - | - | - | - | 2019-12-20T06:32:56Z |
Sierra IC | CSD25213W10 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
North Star Micro | CSD25213W10 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
- CSD25213W10 data sheet, product information and supportP-Channel NexFET™ Power MOSFET, CSD25213W10 ...
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- CSD25213W10 - Electronic Specifier
- CSD25213W10 Datasheet(PDF) - Texas Instruments
- Texas Instruments CSD25213W10 - FETs, MOSFETs - Utmel
Alternate Names
Texas Instruments has several brands around the world that may have alternate names for CSD25213W10 due to regional differences or acquisition. CSD25213W10 may also be known as the following names:
- TI CSD25213W10
- TEXAS CSD25213W10
- TEXAS INST CSD25213W10
- TEXAS INSTR CSD25213W10
- TEXAS INSTRUMENT CSD25213W10
- TEXAS INS CSD25213W10
- TEXAS INSTRUMENTS INC CSD25213W10
- TEXAS INSTRUMEN CSD25213W10
- TEX CSD25213W10
- TEXAS INSTRU CSD25213W10
- TI/NS CSD25213W10
- Texas Instruments (TI) CSD25213W10
- TEXASIN CSD25213W10
- TEXINS CSD25213W10
- TEXAS INSTRUMENTS INCORPORATED CSD25213W10
- TEAXS CSD25213W10
- TEXAS INTRUMENTS CSD25213W10
- TEXAS INSTRUM CSD25213W10
- TEXAS INSRUMENT CSD25213W10
- TEXAS IST CSD25213W10
- TI-PB CSD25213W10
- TI-ROHS CSD25213W10
- Texas Instruments Rfid Systems CSD25213W10
- TEXINST CSD25213W10
- TEXAS INSRUMENTS CSD25213W10
- Texas Instr. CSD25213W10
- Texas Instruments Inc. CSD25213W10