Mfr. #:
NE3515S02-T1D-A
Description:
RF JFET Transistors Super Low Noise Pseudomorphic
Lifecycle:
New from this manufacturer.
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NE3515S02-T1D-A Information

Part No. NE3515S02-T1D-A is now available at OMO. Request a quote of NE3515S02-T1D-A please use the request quote or email us a RFQ.

Specifications

Transistor Type: pHEMT
RoHS: Y
Subcategory: Transistors
Mounting Style: SMD/SMT
Package / Case: S0-2
Packaging: Reel
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Product: RF JFET
Type: GaAs pHEMT
Technology: GaAs
Manufacturer: CEL
Brand: CEL
Id - Continuous Drain Current: 88 mA
Forward Transconductance - Min: 70 mS
Vds - Drain-Source Breakdown Voltage: 4 V
Pd - Power Dissipation: 165 mW
P1dB - Compression Point: 14 dBm
Gain: 12.5 dB
Operating Frequency: 12 GHz
Factory Pack Quantity: 10000
NF - Noise Figure: 0.3 dB
Vgs - Gate-Source Breakdown Voltage: - 3 V
Maximum Operating Temperature: + 125 C

NE3515S02-T1D-A Price & Stock

CEL NE3515S02-T1D-A pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
NexxonNE3515S02-T1D-AContact-----2018-02-27T00:44:39Z

Alternate Names

CEL has several brands around the world that may have alternate names for NE3515S02-T1D-A due to regional differences or acquisition. NE3515S02-T1D-A may also be known as the following names:

  • CALIFORNIA EASTERN LABS NE3515S02-T1D-A
  • California Eastern Laboratories NE3515S02-T1D-A
  • CALIFORNIA EASTERN LAB NE3515S02-T1D-A
  • NEC/CEL NE3515S02-T1D-A
  • CEL CALIFORNIA EASTERN LABS NE3515S02-T1D-A
  • CEL-NEC NE3515S02-T1D-A
  • CEL CALIFORNIA EASTERN LABS (VA) NE3515S02-T1D-A
  • California Eastern Laboratories (CEL) NE3515S02-T1D-A
  • CEL (VA) NE3515S02-T1D-A
  • CALIFORNIA EASTERN LABORATORIE NE3515S02-T1D-A
  • California Eastern Laboratories Inc NE3515S02-T1D-A
  • CEL CALIFORNIA EASTERN LABORATORIES NE3515S02-T1D-A
  • California Eastern Labs (CEL/NEC) NE3515S02-T1D-A