IXFP270N06T3 - IXYS

Mfr. #:
IXFP270N06T3
Description:
MOSFET 60V/270A TrenchT3
Lifecycle:
New from this manufacturer.
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IXFP270N06T3 Information

60V TrenchT3 HiPerFET Power MOSFETs
IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ, can withstand a junction temperature up to 175°C, and are avalanche rated at high avalanche current levels.Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. In addition, the fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs help achieve high efficiency, especially during high-speed switching.IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: SiC
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: IXYS
Manufacturer: IXYS
Series: IXF
Tradename: HiPerFET
Channel Mode: Enhancement
Forward Transconductance - Min: 83 S
Vds - Drain-Source Breakdown Voltage: 60 V
Factory Pack Quantity: 50
Pd - Power Dissipation: 480 W
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 39 ns
Rise Time: 36 ns
Rds On - Drain-Source Resistance: 3.1 mOhms
Id - Continuous Drain Current: 270 A
Qg - Gate Charge: 200 nC
Fall Time: 20 ns
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.063493 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXFP270N06T3 Price & Stock

IXYS IXFP270N06T3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser747-IXFP270N06T36237.4233.4626.8623.3723.372020-02-05T22:19:18Z
Digi-KeyIXFP270N06T3-ND---26.2026.2026.202020-02-04T16:06:00Z
TMEIXFP270N06T39623.6518.7816.9116.9116.912020-02-06T09:16:30Z
Abacus TechnologiesIXFP270N06T3400-----2019-12-06T00:07:36Z
NexxonIXFP270N06T3Contact-----2018-02-27T00:44:39Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXFP270N06T3 due to regional differences or acquisition. IXFP270N06T3 may also be known as the following names:

  • IXYS CORPORATION IXFP270N06T3
  • IXY IXFP270N06T3
  • IXYS CORP IXFP270N06T3
  • IXYS SEMICONDUCTOR IXFP270N06T3
  • IXYS Integrated Circuits Division IXFP270N06T3
  • IXYS Integrated Circuits/Clare IXFP270N06T3
  • IXYS GMBH IXFP270N06T3
  • IXYS-DIRECTED ENERGY IXFP270N06T3
  • IXYS Integrated Circuits Division Inc IXFP270N06T3
  • IXYS SEMICONDUCTOR GMBH IXFP270N06T3
  • IXYS (VA) IXFP270N06T3
  • IXYS CORPO IXFP270N06T3
  • IXYS Semiconducter GmbH IXFP270N06T3
  • IXYS SEMICONDUCTOR CORP IXFP270N06T3
  • IXYS INTEGCIRCUITS DIV(CLARE) IXFP270N06T3
  • IXYS Colorado (IXYS RF Division) IXFP270N06T3
  • IXYS SEMICOND IXFP270N06T3
  • IXYS Integrated Circuits IXFP270N06T3
  • Zilog/IXYS IXFP270N06T3
  • IXYSCOR IXFP270N06T3
  • Clare/LXYS Corporation IXFP270N06T3
  • IXYS-RF IXFP270N06T3
  • CP CLAIRE IXFP270N06T3
  • Clare (IXYS) IXFP270N06T3
  • IXYS CORPORATION|V IXFP270N06T3