Mfr. #:
CGHV59350F
Description:
RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
Lifecycle:
New from this manufacturer.
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CGHV59350F Information

GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Tray
Subcategory: Transistors
Series: T1G
Configuration: Single
Mounting Style: SMD/SMT
Product: RF Power Transistor
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Transistor Polarity: N-Channel
Transistor Type: HEMT
Type: GaN SiC HEMT
Technology: GaN SiC
Maximum Drain Gate Voltage: 48 V
Vds - Drain-Source Breakdown Voltage: 36 V
Pd - Power Dissipation: 288 W
Output Power: 260 W
Factory Pack Quantity: 25
Id - Continuous Drain Current: 24 A
Operating Frequency: 2 GHz
Gain: 18 dB
Vgs - Gate-Source Breakdown Voltage: 145 V
Part # Aliases: 1110346
Maximum Operating Temperature: + 250 C

CGHV59350F Price & Stock

Wolfspeed CGHV59350F pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCGHV59350F-ND239570.439570.439570.439570.439570.432019-12-29T13:55:53Z
Richardson RFPDCGHV59350F319611.009611.009611.009611.009611.002019-12-28T02:24:40Z
Sierra ICCGHV59350FContact-----2019-12-16T00:48:56Z

Alternate Names

Wolfspeed has several brands around the world that may have alternate names for CGHV59350F due to regional differences or acquisition. CGHV59350F may also be known as the following names: