MOSFET

CDM22010-650 SL - Central Semiconductor

Central Semiconductor
CDMCDM2CDM22CDM220
Mfr. #:
CDM22010-650 SL
Description:
MOSFET N-Ch 10A PFC FET 650V 8.0nC 0.88Ohm
Lifecycle:
New from this manufacturer.
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CDM22010-650 SL Information

CDMxx Silicon N-Channel Power MOSFETs
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Brand: Central Semiconductor
Manufacturer: Central Semiconductor
Series: CDM
Rds On - Drain-Source Resistance: 880 mOhms
Factory Pack Quantity: 750
Vds - Drain-Source Breakdown Voltage: 650 V
Typical Turn-Off Delay Time: 57 ns
Fall Time: 36 ns
Rise Time: 33 ns
Vgs - Gate-Source Voltage: 30 V
Typical Turn-On Delay Time: 20 ns
Qg - Gate Charge: 20 nC
Vgs th - Gate-Source Threshold Voltage: 2 V
Pd - Power Dissipation: 156 W
Id - Continuous Drain Current: 10 A
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

CDM22010-650 SL Price & Stock

Central Semiconductor CDM22010-650 SL pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCDM22010-650SL-ND62914.0012.559.247.827.822020-01-02T13:46:23Z
Mouser610-CDM22010-650SL64413.3711.849.476.876.402020-01-01T18:19:57Z

Alternate Names

Central Semiconductor has several brands around the world that may have alternate names for CDM22010-650 SL due to regional differences or acquisition. CDM22010-650 SL may also be known as the following names:

  • CENTRAL SEMI CDM22010-650 SL
  • CENTRAL CDM22010-650 SL
  • CSC CDM22010-650 SL
  • CENTRAL SEMICONDUCTOR CORP CDM22010-650 SL
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  • CENTRAL SEMICONDUCTOR CORPORATION CDM22010-650 SL
  • CTLSEM CDM22010-650 SL
  • CENTRAL SEMICONDUCTORS CORP CDM22010-650 SL
  • Central Semiconductor Cor CDM22010-650 SL
  • CENTRAL SEMICOND CDM22010-650 SL
  • Central Semiconductor Inc CDM22010-650 SL
  • CENTRAL SEMICONDUC CDM22010-650 SL
  • CENTAL SEMI CDM22010-650 SL
  • CENTRAL SEMI INC CDM22010-650 SL
  • CENTRAL SEMI-CONDU CDM22010-650 SL
  • NPN Central Semi CDM22010-650 SL
  • CENTRAL SEMIN CDM22010-650 SL
  • CNTRSEMI CDM22010-650 SL