CMNDM7001 TR - Central Semiconductor

Mfr. #:
CMNDM7001 TR
Description:
MOSFET SMD- Small Signal N-Channel Mosfet
Lifecycle:
New from this manufacturer.
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CMNDM7001 TR Information

CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Central Semiconductor N-Channel Enhancement-Mode MOSFETs
Central Semiconductor CMNDM7001, CMUDM7004, and CMUDM7005 surface mount N-channel enhancement mode MOSFETs are designed for high-speed pulsed amplifier and driver applications. These Central Semiconductor MOSFETs offer low rDS(ON) and low threshold voltage and are manufactured by the N-channel DMOS process. These devices are ideal for use in load/power switches, power supply converter circuits, and battery-powered portable devices.Learn More

Specifications

RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-953
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Manufacturer: Central Semiconductor
Brand: Central Semiconductor
Part # Aliases: CMNDM7001 PBFREE TR
Series: CMNDM
Vgs th - Gate-Source Threshold Voltage: 900 mV
Factory Pack Quantity: 8000
Typical Turn-Off Delay Time: 75 ns
Qg - Gate Charge: 566 pC
Typical Turn-On Delay Time: 50 ns
Pd - Power Dissipation: 250 mW
Id - Continuous Drain Current: 200 mA
Vds - Drain-Source Breakdown Voltage: 20 V
Forward Transconductance - Min: 100 mS
Vgs - Gate-Source Voltage: 10 V
Rds On - Drain-Source Resistance: 1.3 Ohms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C

CMNDM7001 TR Price & Stock

Central Semiconductor CMNDM7001 TR pricing and available inventory.

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AvnetCMNDM7001 TR-----1.472020-01-22T02:01:03Z

Alternate Names

Central Semiconductor has several brands around the world that may have alternate names for CMNDM7001 TR due to regional differences or acquisition. CMNDM7001 TR may also be known as the following names:

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