- Mfr. #:
- IXXQ30N60B3M
- Description:
- IGBT Transistors DISC IGBT XPT-GENX3
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXXQ30N60B3M Information
1.Please confirm the detail which include the part No. and the manufacturer of the products when ordering.
2.If you have bill of material(BOM) list require to quote. You could send to our email.
3.You can email us to change the order details before shipment.
4. Orders cannot be canceled after shipping the packages.
Specifications
| Mounting Style: | Through Hole |
|---|---|
| Package / Case: | TO-220FP-3 |
| Configuration: | Single |
| Technology: | Si |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Subcategory: | IGBTs |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Pd - Power Dissipation: | 90 W |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Continuous Collector Current at 25 C: | 33 A |
| Factory Pack Quantity: | 30 |
| Maximum Gate Emitter Voltage: | 20 V |
| Continuous Collector Current Ic Max: | 140 A |
| Gate-Emitter Leakage Current: | 100 nA |
| Collector-Emitter Saturation Voltage: | 1.66 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
IXXQ30N60B3M Price & Stock
IXYS IXXQ30N60B3M pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXXQ30N60B3M-ND | 8 | 5.27 | 4.73 | 3.58 | 2.73 | 2.45 | 2020-03-15T13:03:04Z |
| Mouser | 747-IXXQ30N60B3M | - | 6.03 | 5.39 | 4.41 | 3.98 | 3.98 | 2020-03-13T22:00:12Z |
| TME | IXXQ30N60B3M | - | 4.15 | 3.30 | 2.97 | 2.97 | 2.97 | 2020-03-14T10:31:51Z |
| Nexxon | IXXQ30N60B3M | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
Alternate Names
IXYS has several brands around the world that may have alternate names for IXXQ30N60B3M due to regional differences or acquisition. IXXQ30N60B3M may also be known as the following names:
- IXYS CORPORATION IXXQ30N60B3M
- IXY IXXQ30N60B3M
- IXYS CORP IXXQ30N60B3M
- IXYS SEMICONDUCTOR IXXQ30N60B3M
- IXYS Integrated Circuits Division IXXQ30N60B3M
- IXYS Integrated Circuits/Clare IXXQ30N60B3M
- IXYS GMBH IXXQ30N60B3M
- IXYS-DIRECTED ENERGY IXXQ30N60B3M
- IXYS Integrated Circuits Division Inc IXXQ30N60B3M
- IXYS SEMICONDUCTOR GMBH IXXQ30N60B3M
- IXYS (VA) IXXQ30N60B3M
- IXYS CORPO IXXQ30N60B3M
- IXYS Semiconducter GmbH IXXQ30N60B3M
- IXYS SEMICONDUCTOR CORP IXXQ30N60B3M
- IXYS INTEGCIRCUITS DIV(CLARE) IXXQ30N60B3M
- IXYS Colorado (IXYS RF Division) IXXQ30N60B3M
- IXYS SEMICOND IXXQ30N60B3M
- IXYS Integrated Circuits IXXQ30N60B3M
- Zilog/IXYS IXXQ30N60B3M
- IXYSCOR IXXQ30N60B3M
- Clare/LXYS Corporation IXXQ30N60B3M
- IXYS-RF IXXQ30N60B3M
- CP CLAIRE IXXQ30N60B3M
- Clare (IXYS) IXXQ30N60B3M
- IXYS CORPORATION|V IXXQ30N60B3M