Mfr. #:
IXYN100N65C3H1
Description:
IGBT Transistors 650V/166A XPT Copacked SOT-227B
Lifecycle:
New from this manufacturer.
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IXYN100N65C3H1 Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Configuration: Single
Technology: Si
Package / Case: SOT-227B-4
Mounting Style: SMD/SMT
Manufacturer: IXYS
Brand: IXYS
Series: IXYN100N65
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Collector- Emitter Voltage VCEO Max: 650 V
Pd - Power Dissipation: 600 W
Maximum Gate Emitter Voltage: 30 V
Continuous Collector Current at 25 C: 166 A
Continuous Collector Current Ic Max: 166 A
Gate-Emitter Leakage Current: 100 nA
Factory Pack Quantity: 10
Collector-Emitter Saturation Voltage: 1.85 V
Unit Weight: 1.058219 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXYN100N65C3H1 Price & Stock

IXYS IXYN100N65C3H1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXYN100N65C3H1-ND1,682180.36166.34140.18119.62119.622020-02-21T17:09:39Z
Mouser747-IXYN100N65C3H1276180.36166.34140.18140.18140.182020-02-21T22:48:47Z
TMEIXYN100N65C3H130188.37150.36150.36150.36150.362020-02-22T10:31:31Z
North Star MicroIXYN100N65C3H1Contact-----2015-05-20T05:52:12Z
Sierra ICIXYN100N65C3H1Contact-----2019-12-16T00:48:56Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXYN100N65C3H1 due to regional differences or acquisition. IXYN100N65C3H1 may also be known as the following names:

  • IXYS CORPORATION IXYN100N65C3H1
  • IXY IXYN100N65C3H1
  • IXYS CORP IXYN100N65C3H1
  • IXYS SEMICONDUCTOR IXYN100N65C3H1
  • IXYS Integrated Circuits Division IXYN100N65C3H1
  • IXYS Integrated Circuits/Clare IXYN100N65C3H1
  • IXYS GMBH IXYN100N65C3H1
  • IXYS-DIRECTED ENERGY IXYN100N65C3H1
  • IXYS Integrated Circuits Division Inc IXYN100N65C3H1
  • IXYS SEMICONDUCTOR GMBH IXYN100N65C3H1
  • IXYS (VA) IXYN100N65C3H1
  • IXYS CORPO IXYN100N65C3H1
  • IXYS Semiconducter GmbH IXYN100N65C3H1
  • IXYS SEMICONDUCTOR CORP IXYN100N65C3H1
  • IXYS INTEGCIRCUITS DIV(CLARE) IXYN100N65C3H1
  • IXYS Colorado (IXYS RF Division) IXYN100N65C3H1
  • IXYS SEMICOND IXYN100N65C3H1
  • IXYS Integrated Circuits IXYN100N65C3H1
  • Zilog/IXYS IXYN100N65C3H1
  • IXYSCOR IXYN100N65C3H1
  • Clare/LXYS Corporation IXYN100N65C3H1
  • IXYS-RF IXYN100N65C3H1
  • CP CLAIRE IXYN100N65C3H1
  • Clare (IXYS) IXYN100N65C3H1
  • IXYS CORPORATION|V IXYN100N65C3H1