Mfr. #:
QPD1003
Description:
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
Lifecycle:
New from this manufacturer.
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QPD1003 Information

QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Specifications

RoHS: Y
Packaging: Tray
Subcategory: Transistors
Configuration: Single
Mounting Style: SMD/SMT
Package / Case: RF-565
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Development Kit: QPD1003PCB401
Series: QPD
Transistor Polarity: N-Channel
Transistor Type: HEMT
Technology: GaN SiC
Output Power: 540 W
Vds - Drain-Source Breakdown Voltage: 50 V
Pd - Power Dissipation: 370 W
Gain: 19.9 dB
Id - Continuous Drain Current: 15 A
Vgs - Gate-Source Breakdown Voltage: 145 V
Part # Aliases: 1131389
Factory Pack Quantity: 18
Operating Frequency: 1.2 GHz to 1.4 GHz
Operating Temperature Range: - 40 C to + 85 C
Minimum Operating Temperature: - 40 C
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
Maximum Operating Temperature: + 85 C

QPD1003 Price & Stock

Qorvo QPD1003 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser772-QPD100324308.484308.483505.923336.963336.962019-12-09T06:55:45Z
RFMWQPD1003164308.484308.483505.923168.003168.002019-12-10T07:58:55Z

Alternate Names

Qorvo has several brands around the world that may have alternate names for QPD1003 due to regional differences or acquisition. QPD1003 may also be known as the following names:

  • QORVO INC QPD1003
  • Qorvo / TriQuint Semiconductor QPD1003