BSS806NE H6327 - Infineon Technologies

Mfr. #:
BSS806NE H6327
Description:
MOSFET N-Ch 20V 2.3A SOT-23-3
Lifecycle:
New from this manufacturer.
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BSS806NE H6327 Information

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Specifications

RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-23-3
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Channel Mode: Enhancement
Part # Aliases: BSS806NEH6327XTSA1 SP000999336
Series: BSS806
Rise Time: 9.9 ns
Forward Transconductance - Min: 9 S
Vgs - Gate-Source Voltage: 8 V
Typical Turn-On Delay Time: 7.5 ns
Pd - Power Dissipation: 500 mW (1/2 W)
Rds On - Drain-Source Resistance: 41 mOhms
Factory Pack Quantity: 3000
Vgs th - Gate-Source Threshold Voltage: 300 mV
Fall Time: 3.7 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Length: 2.9 mm
Id - Continuous Drain Current: 2.3 A
Typical Turn-Off Delay Time: 12 ns
Qg - Gate Charge: 1.7 nC
Width: 1.3 mm
Height: 1.1 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.000282 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

BSS806NE H6327 Price & Stock

Infineon BSS806NE H6327 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser726-BSS806NEH63275,1412.661.890.8690.6660.5192020-03-13T22:00:12Z

Alternate Names

Infineon has several brands around the world that may have alternate names for BSS806NE H6327 due to regional differences or acquisition. BSS806NE H6327 may also be known as the following names:

  • Infineon Technologies BSS806NE H6327
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