- Mfr. #:
- IXFH36N55Q2
- Description:
- MOSFET 36 Amps 550V 0.16 Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH36N55Q2 Information
Request a quote IXFH36N55Q2 at omo-ic.com. All items are new and The excellent quality and guaranteed services of IXFH36N55Q2 In Stock for Sale, Check stock quantity and pricing, view product specifications or email us.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tube |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Configuration: | Single |
Technology: | Si |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Manufacturer: | IXYS |
Brand: | IXYS |
Series: | IXFH36N55 |
Tradename: | HyperFET |
Channel Mode: | Enhancement |
Fall Time: | 8 ns |
Pd - Power Dissipation: | 560 W |
Vds - Drain-Source Breakdown Voltage: | 550 V |
Width: | 5.3 mm |
Typical Turn-Off Delay Time: | 42 ns |
Id - Continuous Drain Current: | 36 A |
Vgs - Gate-Source Voltage: | 30 V |
Factory Pack Quantity: | 30 |
Height: | 21.46 mm |
Rds On - Drain-Source Resistance: | 180 mOhms |
Typical Turn-On Delay Time: | 17 ns |
Length: | 16.26 mm |
Rise Time: | 13 ns |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Unit Weight: | 0.229281 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
IXFH36N55Q2 Price & Stock
IXYS IXFH36N55Q2 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXFH36N55Q2-ND | - | - | - | 111.35 | 111.35 | 111.35 | 2020-01-31T16:12:59Z |
North Star Micro | IXFH36N55Q2 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH36N55Q2 due to regional differences or acquisition. IXFH36N55Q2 may also be known as the following names:
- IXYS CORPORATION IXFH36N55Q2
- IXY IXFH36N55Q2
- IXYS CORP IXFH36N55Q2
- IXYS SEMICONDUCTOR IXFH36N55Q2
- IXYS Integrated Circuits Division IXFH36N55Q2
- IXYS Integrated Circuits/Clare IXFH36N55Q2
- IXYS GMBH IXFH36N55Q2
- IXYS-DIRECTED ENERGY IXFH36N55Q2
- IXYS Integrated Circuits Division Inc IXFH36N55Q2
- IXYS SEMICONDUCTOR GMBH IXFH36N55Q2
- IXYS (VA) IXFH36N55Q2
- IXYS CORPO IXFH36N55Q2
- IXYS Semiconducter GmbH IXFH36N55Q2
- IXYS SEMICONDUCTOR CORP IXFH36N55Q2
- IXYS INTEGCIRCUITS DIV(CLARE) IXFH36N55Q2
- IXYS Colorado (IXYS RF Division) IXFH36N55Q2
- IXYS SEMICOND IXFH36N55Q2
- IXYS Integrated Circuits IXFH36N55Q2
- Zilog/IXYS IXFH36N55Q2
- IXYSCOR IXFH36N55Q2
- Clare/LXYS Corporation IXFH36N55Q2
- IXYS-RF IXFH36N55Q2
- CP CLAIRE IXFH36N55Q2
- Clare (IXYS) IXFH36N55Q2
- IXYS CORPORATION|V IXFH36N55Q2