IPN70R2K1CEATMA1 - Infineon Technologies

Mfr. #:
IPN70R2K1CEATMA1
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
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IPN70R2K1CEATMA1 Information

CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Configuration: Single
Technology: Si
Package / Case: SOT-223-3
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPN70R2K1CE SP001664860
Channel Mode: Enhancement
Series: CoolMOS CE
Tradename: CoolMOS
Rise Time: 9 ns
Vds - Drain-Source Breakdown Voltage: 700 V
Qg - Gate Charge: 7.8 nC
Typical Turn-On Delay Time: 6.4 ns
Pd - Power Dissipation: 5 W
Id - Continuous Drain Current: 4 A
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Fall Time: 27 ns
Typical Turn-Off Delay Time: 25 ns
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Rds On - Drain-Source Resistance: 1.89 Ohms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.009171 oz
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

IPN70R2K1CEATMA1 Price & Stock

Infineon IPN70R2K1CEATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Arrow ElectronicsIPN70R2K1CEATMA13,000----2.872019-12-03T16:20:29Z
Digi-KeyIPN70R2K1CEATMA1-ND-----1.522019-12-03T14:05:12Z
VericalIPN70R2K1CEATMA13,000----1.482019-12-03T17:56:46Z
Mouser726-IPN70R2K1CEATMA1-4.233.552.161.681.432019-12-02T23:58:26Z
AvnetIPN70R2K1CEATMA1-----1.372019-12-04T02:48:28Z
Avnet EuropeSP001664860-----2.082019-12-04T08:48:05Z
LTL Group40479311,152-----2019-12-02T05:01:09Z
Classic ComponentsIPN70R2K1CEATMA14,620-----2019-11-12T23:57:55Z

Alternate Names

Infineon has several brands around the world that may have alternate names for IPN70R2K1CEATMA1 due to regional differences or acquisition. IPN70R2K1CEATMA1 may also be known as the following names:

  • Infineon Technologies IPN70R2K1CEATMA1
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