- Mfr. #:
- SI7625DN-T1-GE3
- Description:
- MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI7625DN-T1-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- TrenchFET® P-Channel MOSFETs
- Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Tradename: | TrenchFET |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Part # Aliases: | SI7625DN-GE3 |
Series: | SI7 |
Packaging: | Reel |
Package / Case: | PowerPAK-1212-8 |
Transistor Polarity: | P-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 55 ns |
Pd - Power Dissipation: | 52 W |
Rds On - Drain-Source Resistance: | 5.6 mOhms |
Forward Transconductance - Min: | 47 S |
Id - Continuous Drain Current: | 35 A |
Factory Pack Quantity: | 3000 |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Length: | 3.3 mm |
Width: | 3.3 mm |
Vgs - Gate-Source Voltage: | 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Typical Turn-On Delay Time: | 15 ns |
Rise Time: | 13 ns |
Qg - Gate Charge: | 126 nC |
Fall Time: | 10 ns |
Height: | 1.04 mm |
Transistor Type: | 1 P-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SI7625DN-T1-GE3 Price & Stock
Vishay SI7625DN-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SI7625DN-T1-GE3CT-ND | 44,027 | 7.69 | 6.88 | 4.90 | 3.38 | 3.38 | 2019-12-29T13:55:53Z |
Digi-Key | SI7625DN-T1-GE3DKR-ND | 44,027 | 7.69 | 6.88 | 4.90 | 3.38 | 3.38 | 2019-12-29T13:55:53Z |
Digi-Key | SI7625DN-T1-GE3TR-ND | 42,000 | - | - | - | - | 2.94 | 2019-12-29T13:55:53Z |
Avnet | SI7625DN-T1-GE3 | 15,000 | - | - | - | - | 2.91 | 2019-12-28T02:45:56Z |
Avnet | 69W7232 | - | 7.90 | 7.90 | 5.00 | 4.65 | 4.65 | 2019-12-28T02:45:56Z |
Mouser | 781-SI7625DN-T1-GE3 | 16,398 | 7.06 | 6.44 | 5.07 | 3.39 | 3.17 | 2019-12-27T21:47:48Z |
element14 APAC | 2459435 | 46 | 7.39 | 6.74 | 5.31 | 3.56 | 3.32 | 2019-12-28T02:14:09Z |
element14 APAC | 2335369 | 4,426 | 7.39 | 6.74 | 5.31 | 3.56 | 3.15 | 2019-12-28T02:14:09Z |
element14 APAC | 2335369RL | - | - | 6.74 | 5.31 | 3.56 | 3.15 | 2019-12-28T02:14:09Z |
Chip One Stop Japan | C1S806001173497 | 310 | 4.67 | 4.17 | 3.68 | 3.68 | 3.68 | 2019-12-30T11:57:05Z |
Arrow Electronics | SI7625DN-T1-GE3 | 6,000 | - | - | - | - | 2.91 | 2019-12-29T16:04:11Z |
Arrow Electronics | SI7625DN-T1-GE3 | 927 | 6.49 | 5.95 | 4.89 | 4.07 | 4.07 | 2019-12-29T16:04:11Z |
TTI | SI7625DN-T1-GE3 | 42,000 | - | - | - | - | 2.96 | 2019-12-28T09:32:16Z |
Verical | SI7625DN-T1-GE3 | 6,000 | - | - | - | - | 2.75 | 2019-12-29T17:59:44Z |
Verical | SI7625DN-T1-GE3 | 927 | - | - | 4.89 | 4.07 | 4.07 | 2019-12-29T17:59:44Z |
Verical | SI7625DN-T1-GE3 | 310 | - | - | 5.29 | 5.29 | 5.29 | 2019-12-29T17:59:44Z |
Farnell | 2335369 | 5,495 | - | 7.66 | 5.62 | 3.47 | 3.28 | 2019-12-28T02:58:29Z |
Farnell | 2335369RL | - | - | 7.66 | 5.62 | 3.47 | 3.28 | 2019-12-28T02:58:29Z |
Newark | 97W2704 | 4,380 | 7.06 | 7.06 | 5.07 | 3.39 | 3.39 | 2019-12-18T08:31:02Z |
Newark | 69W7232 | 46 | 7.06 | 7.06 | 5.07 | 3.39 | 3.39 | 2019-12-18T08:31:02Z |
Newark | 30AC0201 | 15,000 | 3.79 | 3.79 | 3.79 | 3.79 | 3.70 | 2019-12-18T08:31:01Z |
Avnet Europe | SI7625DN-T1-GE3 | - | - | - | - | - | - | 2019-12-30T07:53:07Z |
Ameya360 | SI7625DN-T1-GE3 | 3,000 | - | - | - | - | 3.69 | 2019-12-27T02:12:44Z |
J2 Sourcing | SI7625DN-T1-GE3 | 172 | - | - | - | - | - | 2019-12-13T09:52:53Z |
Sourceability | SI7625DN-T1-GE3 | 15,000 | - | - | - | - | - | 2019-12-18T20:43:39Z |
Classic Components | SI7625DN-T1-GE3 | 39 | - | - | - | - | - | 2019-12-24T18:41:18Z |
Abacus Technologies | SI7625DN-T1-GE3 | 40,656 | - | - | - | - | - | 2019-12-06T00:07:36Z |
North Star Micro | SI7625DN-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SI7625DN-T1-GE3 due to regional differences or acquisition. SI7625DN-T1-GE3 may also be known as the following names:
- VIS SI7625DN-T1-GE3
- VISH SI7625DN-T1-GE3
- VISHAY INTERTECHNOLOGY INC SI7625DN-T1-GE3
- VISHA SI7625DN-T1-GE3
- VISHAY THIN FILM SI7625DN-T1-GE3
- VISHAY INTERTECHNOLOGY SI7625DN-T1-GE3
- VISHY SI7625DN-T1-GE3
- VISAHY SI7625DN-T1-GE3
- VISH/IR SI7625DN-T1-GE3
- VSHY SI7625DN-T1-GE3
- VSH SI7625DN-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SI7625DN-T1-GE3
- VISHAY ELECTRONIC SI7625DN-T1-GE3
- VSHAY SI7625DN-T1-GE3
- VISHAY FOIL RESISTORS SI7625DN-T1-GE3
- VISHAY AMERICAS INC SI7625DN-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SI7625DN-T1-GE3
- VISHAY AMERICAS SI7625DN-T1-GE3
- VISHAY ELECTRO-FILMS SI7625DN-T1-GE3
- VISHAY COMPONENTS SI7625DN-T1-GE3
- Vishay Semiconductors SI7625DN-T1-GE3
- VISHAY COMPONENTS NEDERLAND SI7625DN-T1-GE3
- VISHAY INTERTEC SI7625DN-T1-GE3
- VISHAY FOIL RESISTORS / VPG SI7625DN-T1-GE3
- VISHAY OPTO SI7625DN-T1-GE3
- Vishay Intertechnology Inc. SI7625DN-T1-GE3