- Mfr. #:
- IXFN32N120P
- Description:
- MOSFET 32 Amps 1200V
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFN32N120P Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tube |
Configuration: | Single |
Technology: | Si |
Package / Case: | SOT-227-4 |
Type: | Polar HiPerFET Power MOSFET |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Manufacturer: | IXYS |
Brand: | IXYS |
Series: | IXFN32N120 |
Tradename: | HiPerFET |
Channel Mode: | Enhancement |
Mounting Style: | Chassis Mount |
Typical Turn-Off Delay Time: | 88 ns |
Typical Turn-On Delay Time: | 70 ns |
Rise Time: | 62 ns |
Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
Fall Time: | 58 ns |
Length: | 38.23 mm |
Qg - Gate Charge: | 360 nC |
Id - Continuous Drain Current: | 32 A |
Rds On - Drain-Source Resistance: | 310 mOhms |
Vgs - Gate-Source Voltage: | 30 V |
Width: | 25.42 mm |
Forward Transconductance - Min: | 17 S |
Height: | 12.22 mm |
Factory Pack Quantity: | 10 |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Unit Weight: | 1.058219 oz |
Pd - Power Dissipation: | 1 kW |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
IXFN32N120P Price & Stock
IXYS IXFN32N120P pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXFN32N120P-ND | 8 | 419.31 | 391.17 | 327.93 | 327.93 | 327.93 | 2019-12-03T14:05:12Z |
Mouser | 747-IXFN32N120P | 201 | 433.32 | 405.22 | 351.35 | 351.35 | 351.35 | 2019-12-02T23:58:26Z |
USComponent | IXFN32N120P | 95 | - | - | - | - | - | 2019-08-29T20:04:45Z |
TME | IXFN32N120P | - | 478.33 | 380.76 | 380.76 | 380.76 | 380.76 | 2019-12-03T11:37:50Z |
Au Ling | IXFN32N120P | Contact | - | - | - | - | - | 2019-11-27T14:34:02Z |
North Star Micro | IXFN32N120P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Sierra IC | IXFN32N120P | Contact | - | - | - | - | - | 2019-09-03T21:05:22Z |
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFN32N120P due to regional differences or acquisition. IXFN32N120P may also be known as the following names:
- IXYS CORPORATION IXFN32N120P
- IXY IXFN32N120P
- IXYS CORP IXFN32N120P
- IXYS SEMICONDUCTOR IXFN32N120P
- IXYS Integrated Circuits Division IXFN32N120P
- IXYS Integrated Circuits/Clare IXFN32N120P
- IXYS GMBH IXFN32N120P
- IXYS-DIRECTED ENERGY IXFN32N120P
- IXYS Integrated Circuits Division Inc IXFN32N120P
- IXYS SEMICONDUCTOR GMBH IXFN32N120P
- IXYS (VA) IXFN32N120P
- IXYS CORPO IXFN32N120P
- IXYS Semiconducter GmbH IXFN32N120P
- IXYS SEMICONDUCTOR CORP IXFN32N120P
- IXYS INTEGCIRCUITS DIV(CLARE) IXFN32N120P
- IXYS Colorado (IXYS RF Division) IXFN32N120P
- IXYS SEMICOND IXFN32N120P
- IXYS Integrated Circuits IXFN32N120P
- Zilog/IXYS IXFN32N120P
- IXYSCOR IXFN32N120P
- Clare/LXYS Corporation IXFN32N120P
- IXYS-RF IXFN32N120P
- CP CLAIRE IXFN32N120P
- Clare (IXYS) IXFN32N120P
- IXYS CORPORATION|V IXFN32N120P