- Mfr. #:
- IXTH1N200P3HV
- Description:
- MOSFET 2000V/1A HV Power MOSFET, TO-247HV
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTH1N200P3HV Information
- 2000V High Voltage Power MOSFETs
- IXYS 2000V High Voltage Power MOSFETs are the highest voltage Power MOSFET product line in the industry in international standard size packages. The current ratings range from 0.6A to 3A. They are specifically designed to address high blocking voltage and high voltage packages.Learn More
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Brand: | IXYS |
| Manufacturer: | IXYS |
| Channel Mode: | Enhancement |
| Fall Time: | 80 ns |
| Forward Transconductance - Min: | 400 mS |
| Rds On - Drain-Source Resistance: | 40 Ohms |
| Typical Turn-Off Delay Time: | 37 ns |
| Factory Pack Quantity: | 30 |
| Rise Time: | 26 ns |
| Qg - Gate Charge: | 23.5 nC |
| Vgs - Gate-Source Voltage: | 20 V |
| Vds - Drain-Source Breakdown Voltage: | 2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Typical Turn-On Delay Time: | 16 ns |
| Pd - Power Dissipation: | 125 W |
| Id - Continuous Drain Current: | 1 A |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXTH1N200P3HV Price & Stock
IXYS IXTH1N200P3HV pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXTH1N200P3HV-ND | 48 | 42.09 | 38.04 | 30.07 | 23.88 | 23.00 | 2020-03-01T13:58:12Z |
| TME | IXTH1N200P3HV | - | 35.94 | 28.60 | 25.66 | 25.66 | 25.66 | 2020-03-01T10:04:13Z |
Alternate Names
IXYS has several brands around the world that may have alternate names for IXTH1N200P3HV due to regional differences or acquisition. IXTH1N200P3HV may also be known as the following names:
- IXYS CORPORATION IXTH1N200P3HV
- IXY IXTH1N200P3HV
- IXYS CORP IXTH1N200P3HV
- IXYS SEMICONDUCTOR IXTH1N200P3HV
- IXYS Integrated Circuits Division IXTH1N200P3HV
- IXYS Integrated Circuits/Clare IXTH1N200P3HV
- IXYS GMBH IXTH1N200P3HV
- IXYS-DIRECTED ENERGY IXTH1N200P3HV
- IXYS Integrated Circuits Division Inc IXTH1N200P3HV
- IXYS SEMICONDUCTOR GMBH IXTH1N200P3HV
- IXYS (VA) IXTH1N200P3HV
- IXYS CORPO IXTH1N200P3HV
- IXYS Semiconducter GmbH IXTH1N200P3HV
- IXYS SEMICONDUCTOR CORP IXTH1N200P3HV
- IXYS INTEGCIRCUITS DIV(CLARE) IXTH1N200P3HV
- IXYS Colorado (IXYS RF Division) IXTH1N200P3HV
- IXYS SEMICOND IXTH1N200P3HV
- IXYS Integrated Circuits IXTH1N200P3HV
- Zilog/IXYS IXTH1N200P3HV
- IXYSCOR IXTH1N200P3HV
- Clare/LXYS Corporation IXTH1N200P3HV
- IXYS-RF IXTH1N200P3HV
- CP CLAIRE IXTH1N200P3HV
- Clare (IXYS) IXTH1N200P3HV
- IXYS CORPORATION|V IXTH1N200P3HV