IPG20N10S4L35ATMA1 - Infineon Technologies

Mfr. #:
IPG20N10S4L35ATMA1
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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IPG20N10S4L35ATMA1 Information

Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Specifications

RoHS: Y
Package / Case: TDSON-8
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPG20N10S4L-35 IPG2N1S4L35XT SP000859022
Series: IPG20N10
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Factory Pack Quantity: 5000
Length: 5.9 mm
Width: 5.15 mm
Pd - Power Dissipation: 43 W
Typical Turn-On Delay Time: 3 ns, 3 ns
Rds On - Drain-Source Resistance: 29 mOhms, 29 mOhms
Id - Continuous Drain Current: 20 A
Rise Time: 2 ns, 2 ns
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Typical Turn-Off Delay Time: 18 ns, 18 ns
Qg - Gate Charge: 17.4 nC, 17.4 nC
Vgs - Gate-Source Voltage: 16 V
Fall Time: 13 ns, 13 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Height: 1.27 mm
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPG20N10S4L35ATMA1 Price & Stock

Infineon IPG20N10S4L35ATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPG20N10S4L35ATMA1CT-ND4,3217.676.844.873.363.322019-12-15T13:49:08Z
Digi-KeyIPG20N10S4L35ATMA1DKR-ND4,3217.676.844.873.363.322019-12-15T13:49:08Z
Digi-KeyIPG20N10S4L35ATMA1TR-ND-----2.792019-12-15T13:49:08Z
Mouser726-IPG20N10S4L-3519,2057.406.314.853.382.892019-12-15T03:26:04Z
element14 APAC27258581,7807.366.284.833.382.892019-12-14T02:30:41Z
AvnetIPG20N10S4L35ATMA1-----3.132019-12-14T01:48:28Z
Farnell 227258582,708-7.675.483.833.322019-12-14T02:46:16Z
Farnell2725858RL--7.675.483.833.322019-12-14T02:46:16Z
Newark13AC90601,2997.406.314.853.383.382019-12-14T03:45:28Z
Avnet EuropeSP000859022-----4.742019-12-15T07:35:46Z
LTL Group40476771,514-----2019-12-14T06:25:25Z
GreenTree ElectronicsIPG20N10S4L-35212-----2019-11-06T14:43:13Z
Chip 1 ExchangeIPG20N10S4L35ATMA1306-----2019-11-19T09:43:30Z
Abacus TechnologiesIPG20N10S4L-35121,968-----2019-12-06T00:07:36Z
Au LingIPG20N10S4L35ATMA1Contact-----2019-11-27T14:34:02Z
Sierra ICIPG20N10S4L35ATMA1Contact-----2019-09-03T21:05:22Z

Alternate Names

Infineon has several brands around the world that may have alternate names for IPG20N10S4L35ATMA1 due to regional differences or acquisition. IPG20N10S4L35ATMA1 may also be known as the following names:

  • Infineon Technologies IPG20N10S4L35ATMA1
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  • INFINEON TECH IPG20N10S4L35ATMA1
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  • INFINEON TECHNO IPG20N10S4L35ATMA1
  • IR/Infineon IPG20N10S4L35ATMA1
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