SIDR638DP-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIDR638DP-T1-GE3
Description:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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Purchase SIDR638DP-T1-GE3

SIDR638DP-T1-GE3 Information

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Series: SID
Packaging: Reel
Package / Case: PowerPAK-SO-8DC-8
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Typical Turn-On Delay Time: 70 ns
Qg - Gate Charge: 63 nC
Typical Turn-Off Delay Time: 43 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 20 V, - 16 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
Fall Time: 19 ns
Rise Time: 16 ns
Forward Transconductance - Min: 147 S
Pd - Power Dissipation: 125 W
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 1.16 mOhms
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIDR638DP-T1-GE3 Price & Stock

Vishay SIDR638DP-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIDR638DP-T1-GE3CT-ND6,00014.3512.889.486.806.802019-11-28T13:49:54Z
Digi-KeySIDR638DP-T1-GE3DKR-ND6,00014.3512.889.486.806.802019-11-28T13:49:54Z
Digi-KeySIDR638DP-T1-GE3TR-ND6,000----6.042019-11-28T13:49:54Z
Mouser78-SIDR638DP-T1-GE36,00014.7012.249.496.846.372019-11-27T21:58:22Z
element14 APAC29328995,99814.5012.089.376.766.762019-11-29T02:11:47Z
AvnetSIDR638DP-T1-GE3-----6.872019-11-29T01:07:58Z
Farnell 229328995,99816.4612.469.556.416.412019-11-29T15:11:42Z
Farnell2932899RL----6.416.412019-11-29T15:11:42Z
Newark 278AC65045,99811.749.787.605.475.472019-11-29T03:12:41Z
Newark59AC7339-----5.902019-11-29T03:12:41Z
Avnet EuropeSIDR638DP-T1-GE3-9.048.326.966.966.962019-11-29T08:03:07Z
SourceabilitySIDR638DP-T1-GE39,000-----2019-11-26T18:50:02Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SIDR638DP-T1-GE3 due to regional differences or acquisition. SIDR638DP-T1-GE3 may also be known as the following names:

  • VIS SIDR638DP-T1-GE3
  • VISH SIDR638DP-T1-GE3
  • VISHAY INTERTECHNOLOGY INC SIDR638DP-T1-GE3
  • VISHA SIDR638DP-T1-GE3
  • VISHAY THIN FILM SIDR638DP-T1-GE3
  • VISHAY INTERTECHNOLOGY SIDR638DP-T1-GE3
  • VISHY SIDR638DP-T1-GE3
  • VISAHY SIDR638DP-T1-GE3
  • VISH/IR SIDR638DP-T1-GE3
  • VSHY SIDR638DP-T1-GE3
  • VSH SIDR638DP-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIDR638DP-T1-GE3
  • VISHAY ELECTRONIC SIDR638DP-T1-GE3
  • VSHAY SIDR638DP-T1-GE3
  • VISHAY FOIL RESISTORS SIDR638DP-T1-GE3
  • VISHAY AMERICAS INC SIDR638DP-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIDR638DP-T1-GE3
  • VISHAY AMERICAS SIDR638DP-T1-GE3
  • VISHAY ELECTRO-FILMS SIDR638DP-T1-GE3
  • VISHAY COMPONENTS SIDR638DP-T1-GE3
  • Vishay Semiconductors SIDR638DP-T1-GE3
  • VISHAY COMPONENTS NEDERLAND SIDR638DP-T1-GE3
  • VISHAY INTERTEC SIDR638DP-T1-GE3
  • VISHAY FOIL RESISTORS / VPG SIDR638DP-T1-GE3
  • VISHAY OPTO SIDR638DP-T1-GE3
  • Vishay Intertechnology Inc. SIDR638DP-T1-GE3