SIS890DN-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIS890DN-T1-GE3
Description:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase SIS890DN-T1-GE3

SIS890DN-T1-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Specifications

Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Part # Aliases: SIS890DN-GE3
Series: SIS
Packaging: Reel
Package / Case: PowerPAK-1212-8
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
RoHS: E
Fall Time: 9 ns
Pd - Power Dissipation: 52 W
Factory Pack Quantity: 3000
Id - Continuous Drain Current: 30 A
Width: 3.3 mm
Length: 3.3 mm
Qg - Gate Charge: 29 nC
Forward Transconductance - Min: 25 S
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 19.5 mOhms
Typical Turn-Off Delay Time: 16 ns
Rise Time: 12 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Typical Turn-On Delay Time: 10 ns
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Height: 1.04 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIS890DN-T1-GE3 Price & Stock

Vishay SIS890DN-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIS890DN-T1-GE3CT-ND2,2201.901.691.200.8310.8312020-03-13T13:03:17Z
Digi-KeySIS890DN-T1-GE3DKR-ND2,2201.901.691.200.8310.8312020-03-13T13:03:17Z
Digi-KeySIS890DN-T1-GE3TR-ND-----0.7452020-03-13T13:03:17Z
TTISIS890DN-T1-GE321,000----0.7512020-03-14T07:31:27Z
Mouser78-SIS890DN-T1-GE34,1211.941.571.260.8820.8192020-03-13T22:00:12Z
element14 APAC22836934,6992.101.891.350.9230.9232020-03-12T13:48:22Z
VericalSIS890DN-T1-GE32,504--1.140.7980.7982020-03-13T17:48:52Z
Arrow ElectronicsSIS890DN-T1-GE32,5041.911.541.240.8670.8432020-03-13T16:42:43Z
Avnet 270AC6484-1.941.941.261.181.182020-03-14T03:37:25Z
AvnetSIS890DN-T1-GE3-----0.8092020-03-14T03:37:25Z
Farnell 2228369310,944-1.621.180.7800.6772020-03-14T01:50:32Z
Farnell2283693RL----0.7800.6772020-03-14T01:50:32Z
Newark 270AC64841,9100.6750.6750.6750.6750.6752020-03-14T03:17:22Z
Newark30AC0125-----0.9372020-03-14T03:17:22Z
Avnet EuropeSIS890DN-T1-GE3-----1.142020-03-14T08:19:41Z
OMO Electronics3242584,708--1.591.101.102020-03-03T13:00:25Z
Ameya360SIS890DN-T1-GE3-----0.7822020-03-11T06:41:49Z
SourceabilitySIS890DN-T1-GE314,600-----2020-03-03T19:24:07Z
LTL Group428576551-----2020-03-13T01:11:39Z
SPECSIS890DN-T1-GE3379-----2020-03-12T13:02:14Z
Classic ComponentsSIS890DN-T1-GE3208-----2020-03-11T22:08:19Z
Chip 1 ExchangeSIS890DN-T1-GE3321-----2020-02-23T11:43:22Z
NexxonSIS890DN-T1-GE3Contact-----2018-02-27T00:44:39Z
North Star MicroSIS890DN-T1-GE3Contact-----2015-05-20T05:52:12Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SIS890DN-T1-GE3 due to regional differences or acquisition. SIS890DN-T1-GE3 may also be known as the following names:

  • VIS SIS890DN-T1-GE3
  • VISH SIS890DN-T1-GE3
  • VISHAY INTERTECHNOLOGY INC SIS890DN-T1-GE3
  • VISHA SIS890DN-T1-GE3
  • VISHAY THIN FILM SIS890DN-T1-GE3
  • VISHAY INTERTECHNOLOGY SIS890DN-T1-GE3
  • VISHY SIS890DN-T1-GE3
  • VISAHY SIS890DN-T1-GE3
  • VISH/IR SIS890DN-T1-GE3
  • VSHY SIS890DN-T1-GE3
  • VSH SIS890DN-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIS890DN-T1-GE3
  • VISHAY ELECTRONIC SIS890DN-T1-GE3
  • VSHAY SIS890DN-T1-GE3
  • VISHAY FOIL RESISTORS SIS890DN-T1-GE3
  • VISHAY AMERICAS INC SIS890DN-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIS890DN-T1-GE3
  • VISHAY AMERICAS SIS890DN-T1-GE3
  • VISHAY ELECTRO-FILMS SIS890DN-T1-GE3
  • VISHAY COMPONENTS SIS890DN-T1-GE3
  • Vishay Semiconductors SIS890DN-T1-GE3
  • VISHAY COMPONENTS NEDERLAND SIS890DN-T1-GE3
  • VISHAY INTERTEC SIS890DN-T1-GE3
  • VISHAY FOIL RESISTORS / VPG SIS890DN-T1-GE3
  • VISHAY OPTO SIS890DN-T1-GE3
  • Vishay Intertechnology Inc. SIS890DN-T1-GE3