IPD70N12S311ATMA1 - Infineon Technologies

Mfr. #:
IPD70N12S311ATMA1
Description:
MOSFET MOSFET_(120V,300V)
Lifecycle:
New from this manufacturer.
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IPD70N12S311ATMA1 Information

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Specifications

Moisture Sensitive: Yes
RoHS: Y
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Tradename: OptiMOS
Transistor Polarity: N-Channel
Series: N Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPD70N12S3-11 SP001400108
Channel Mode: Enhancement
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 9.2 mOhms
Fall Time: 8 ns
Rise Time: 8 ns
Id - Continuous Drain Current: 70 A
Qg - Gate Charge: 65 nC
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 25 ns
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Typical Turn-On Delay Time: 17 ns
Pd - Power Dissipation: 125 W
Vds - Drain-Source Breakdown Voltage: 120 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.011993 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPD70N12S311ATMA1 Price & Stock

Infineon IPD70N12S311ATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester ElectronicsIPD70N12S3-117,0237.247.246.475.915.912019-11-30T10:01:15Z
Digi-KeyIPD70N12S311ATMA1-ND-----6.252019-11-29T13:46:46Z
Avnet 2IPD70N12S3-11----6.035.722019-11-30T01:24:20Z
AvnetIPD70N12S311ATMA1-----6.062019-11-30T01:24:20Z
Mouser726-IPD70N12S311ATMA-13.2911.329.006.575.662019-11-21T08:22:28Z
Avnet EuropeSP001400108-----7.462019-11-30T07:39:28Z
LTL Group40475621,856-----2019-11-25T02:05:31Z
Classic ComponentsIPD70N12S3-113,696-----2019-11-12T23:57:55Z

Alternate Names

Infineon has several brands around the world that may have alternate names for IPD70N12S311ATMA1 due to regional differences or acquisition. IPD70N12S311ATMA1 may also be known as the following names:

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