IPI029N06NAKSA1 - Infineon Technologies

Mfr. #:
IPI029N06NAKSA1
Description:
MOSFET N-Ch 60V 100A I2PAK-3
Lifecycle:
New from this manufacturer.
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IPI029N06NAKSA1 Information

OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-262-3
Configuration: Single
Technology: Si
Product: OptiMOS Power
Series: OptiMOS 5
Type: OptiMOS 3 Power-Transistor
Tradename: OptiMOS
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPI029N06N IPI29N6NXK SP000962134
Channel Mode: Enhancement
Height: 9.45 mm
Forward Transconductance - Min: 80 S
Fall Time: 8 ns
Qg - Gate Charge: 66 nC
Vds - Drain-Source Breakdown Voltage: 60 V
Factory Pack Quantity: 500
Width: 4.5 mm
Typical Turn-Off Delay Time: 30 ns
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 2.7 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Typical Turn-On Delay Time: 17 ns
Rise Time: 15 ns
Pd - Power Dissipation: 136 W
Id - Continuous Drain Current: 100 A
Length: 10.2 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.084199 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPI029N06NAKSA1 Price & Stock

Infineon IPI029N06NAKSA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIPI029N06NAKSA1-ND38814.3212.839.446.786.782019-11-25T13:43:53Z
Rochester ElectronicsIPI029N06NAKSA120,5086.346.345.635.175.172019-11-23T09:58:42Z
Mouser726-IPI029N06N41014.2412.059.637.036.542019-11-22T21:58:05Z
element14 APAC278109139815.5813.1910.537.697.162019-11-25T14:23:55Z
AvnetIPI029N06NAKSA1------2019-11-22T11:52:31Z
Farnell278109139817.0613.0210.097.497.492019-11-23T03:07:31Z
Newark34AC169939814.2412.059.637.036.302019-11-23T03:57:33Z
RutronikTMOS1719----6.135.912019-11-25T03:18:29Z
Avnet EuropeSP000962134---9.206.826.822019-11-25T07:47:09Z
LTL Group687711256,000-----2019-11-25T02:05:31Z
Classic ComponentsIPI029N06NAKSA143,120-----2019-11-12T23:57:55Z
GreenTree ElectronicsIPI029N06NAKSA156,000-----2019-11-06T14:43:13Z
TMEIPI029N06NAKSA1-14.5710.088.708.708.702019-11-25T11:34:09Z
Abacus TechnologiesIPI029N06NAKSA1113,836-----2019-11-23T00:03:16Z
Sierra ICIPI029N06NAKSA1Contact-----2019-09-03T21:05:22Z
North Star MicroIPI029N06NAKSA1Contact-----2015-05-20T05:52:12Z

Alternate Names

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