Mfr. #:
2N5551TAR
Description:
Bipolar Transistors - BJT NPN Transistor General Purpose
Lifecycle:
New from this manufacturer.
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2N5551TAR Information

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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: Through Hole
Package / Case: TO-92-3 Kinked Lead
Configuration: Single
Brand: ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Transistor Polarity: NPN
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Packaging: Ammo Pack
Pd - Power Dissipation: 625 mW
Emitter- Base Voltage VEBO: 6 V
Height: 4.7 mm
Length: 4.7 mm
Gain Bandwidth Product fT: 300 MHz
Width: 3.93 mm
Series: 2N5551
Factory Pack Quantity: 2000
DC Current Gain hFE Max: 250
DC Collector/Base Gain hfe Min: 80
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Maximum DC Collector Current: 0.6 A
Continuous Collector Current: 0.6 A
Collector-Emitter Saturation Voltage: 0.2 V
Unit Weight: 0.006286 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

2N5551TAR Price & Stock

ON Semiconductor 2N5551TAR pricing and available inventory.

Alternate Names

ON Semiconductor has several brands around the world that may have alternate names for 2N5551TAR due to regional differences or acquisition. 2N5551TAR may also be known as the following names:

  • ON SEMI 2N5551TAR
  • ONS 2N5551TAR
  • ON SEM 2N5551TAR
  • ONSEMICON 2N5551TAR
  • ON SEMICONDUCTO 2N5551TAR
  • ON SEMICONDUCTORS 2N5551TAR
  • OSC 2N5551TAR
  • ONSEMIC 2N5551TAR
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  • ON SEMICONDUCTOR COR 2N5551TAR
  • ONSM 2N5551TAR
  • ON SEMICOND 2N5551TAR
  • ON SEMICO 2N5551TAR
  • ON SEMICONDUCTOR/FAIRCHILD 2N5551TAR
  • MOT/ON SEMI 2N5551TAR
  • ON SEMICONDUCTOR CORPORATION 2N5551TAR
  • ON4 2N5551TAR
  • ON SEMICONDUCTOR CORP 2N5551TAR
  • Fairchild (ON Semiconductor) 2N5551TAR
  • ON-SEMI SCG 2N5551TAR
  • ON SEMICONDUTOR 2N5551TAR
  • ON/PBF 2N5551TAR
  • ON SEMICONDUCTOR (VA) 2N5551TAR
  • ON Semiconductor Inc. 2N5551TAR
  • onsemiconductor 2N5551TAR