- Mfr. #:
- T2G4005528-FS
- Description:
- RF JFET Transistors DC-3.5GHz 55 Watt 28V GaN Flangeless
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
T2G4005528-FS Information
- T2G GaN HEMT Transistors
- QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
- QPD GaN RF Transistors
- Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Specifications
Moisture Sensitive: | Yes |
---|---|
RoHS: | Y |
Packaging: | Tray |
Subcategory: | Transistors |
Series: | T2G |
Product Type: | RF JFET Transistors |
Product Category: | RF JFET Transistors |
Manufacturer: | Qorvo |
Brand: | Qorvo |
Transistor Polarity: | N-Channel |
Transistor Type: | HEMT |
Type: | GaN SiC HEMT |
Technology: | GaN SiC |
Output Power: | 55 W |
Operating Frequency: | 3.5 GHz |
Gain: | 16 dB |
Part # Aliases: | 1099993 |
Factory Pack Quantity: | 100 |
T2G4005528-FS Price & Stock
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Alternate Names
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