- Mfr. #:
- SIA533EDJ-T1-GE3
- Description:
- MOSFET -12V Vds 8V Vgs PowerPAK SC-70
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIA533EDJ-T1-GE3 Information
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
- N & P Channel Pair Thermally Enhanced MOSFETs
- Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Tradename: | TrenchFET, PowerPAK |
Technology: | Si |
Mounting Style: | SMD/SMT |
Part # Aliases: | SIA533EDJ-GE3 |
Series: | SIA |
Packaging: | Reel |
Package / Case: | PowerPAK-SC70-6 |
Transistor Polarity: | N-Channel, P-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Configuration: | Dual |
Vgs - Gate-Source Voltage: | 8 V |
Pd - Power Dissipation: | 7.8 W |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Id - Continuous Drain Current: | 4.5 A |
Rds On - Drain-Source Resistance: | 34 mOhms, 59 mOhms |
Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 21 S, 11 S |
Typical Turn-Off Delay Time: | 20 ns, 25 ns |
Width: | 2.05 mm |
Length: | 2.05 mm |
Number of Channels: | 2 Channel |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Typical Turn-On Delay Time: | 10 ns, 15 ns |
Rise Time: | 10 ns, 15 ns |
Fall Time: | 10 ns, 10 ns |
Qg - Gate Charge: | 10 nC, 13 nC |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Height: | 0.75 mm |
Unit Weight: | 0.000988 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIA533EDJ-T1-GE3 Price & Stock
Vishay SIA533EDJ-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIA533EDJ-T1-GE3CT-ND | 46,570 | 4.27 | 3.65 | 2.53 | 1.61 | 1.61 | 2019-12-25T13:57:58Z |
Digi-Key | SIA533EDJ-T1-GE3DKR-ND | 46,570 | 4.27 | 3.65 | 2.53 | 1.61 | 1.61 | 2019-12-25T13:57:58Z |
Digi-Key | SIA533EDJ-T1-GE3TR-ND | 45,000 | - | - | - | - | 1.32 | 2019-12-25T13:57:58Z |
Avnet | SIA533EDJ-T1-GE3 | 3,000 | - | - | - | - | 1.33 | 2019-12-26T02:27:27Z |
Mouser | 781-SIA533EDJ-T1-GE3 | 25,689 | 4.41 | 3.65 | 2.72 | 1.65 | 1.46 | 2019-12-19T13:38:13Z |
Arrow Electronics | SIA533EDJ-T1-GE3 | 2,785 | 3.78 | 3.28 | 2.51 | 1.55 | 1.55 | 2019-12-25T16:00:39Z |
TTI | SIA533EDJ-T1-GE3 | 3,000 | - | - | - | - | 1.34 | 2019-12-25T07:27:59Z |
Verical | SIA533EDJ-T1-GE3 | 2,785 | - | - | 2.51 | 1.55 | 1.55 | 2019-12-25T17:44:08Z |
Newark | 15AC4247 | - | 1.84 | 1.84 | 1.84 | 1.84 | 1.68 | 2019-12-19T13:38:13Z |
Newark | 04X9740 | - | 4.23 | 4.23 | 3.07 | 2.05 | 1.63 | 2019-12-19T13:38:14Z |
Avnet Europe | SIA533EDJ-T1-GE3 | - | - | - | - | - | 2.71 | 2019-12-25T07:59:22Z |
Allied Electronics & Automation | 70616551 | - | - | - | - | 2.66 | 2.10 | 2019-12-25T11:48:37Z |
Sourceability | SIA533EDJ-T1-GE3 | 33,000 | - | - | - | - | - | 2019-12-18T20:43:39Z |
Quest | SIA533EDJ-T1-GE3 | 60 | 3.64 | 3.64 | 1.82 | 1.82 | 1.82 | 2019-12-25T11:12:01Z |
Chip 1 Exchange | SIA533EDJ-T1-GE3 | 274 | - | - | - | - | - | 2019-11-19T09:43:30Z |
Abacus Technologies | SIA533EDJ-T1-GE3 | 20,328 | - | - | - | - | - | 2019-12-06T00:07:36Z |
North Star Micro | SIA533EDJ-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SIA533EDJ-T1-GE3 due to regional differences or acquisition. SIA533EDJ-T1-GE3 may also be known as the following names:
- VIS SIA533EDJ-T1-GE3
- VISH SIA533EDJ-T1-GE3
- VISHAY INTERTECHNOLOGY INC SIA533EDJ-T1-GE3
- VISHA SIA533EDJ-T1-GE3
- VISHAY THIN FILM SIA533EDJ-T1-GE3
- VISHAY INTERTECHNOLOGY SIA533EDJ-T1-GE3
- VISHY SIA533EDJ-T1-GE3
- VISAHY SIA533EDJ-T1-GE3
- VISH/IR SIA533EDJ-T1-GE3
- VSHY SIA533EDJ-T1-GE3
- VSH SIA533EDJ-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIA533EDJ-T1-GE3
- VISHAY ELECTRONIC SIA533EDJ-T1-GE3
- VSHAY SIA533EDJ-T1-GE3
- VISHAY FOIL RESISTORS SIA533EDJ-T1-GE3
- VISHAY AMERICAS INC SIA533EDJ-T1-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SIA533EDJ-T1-GE3
- VISHAY AMERICAS SIA533EDJ-T1-GE3
- VISHAY ELECTRO-FILMS SIA533EDJ-T1-GE3
- VISHAY COMPONENTS SIA533EDJ-T1-GE3
- Vishay Semiconductors SIA533EDJ-T1-GE3
- VISHAY COMPONENTS NEDERLAND SIA533EDJ-T1-GE3
- VISHAY INTERTEC SIA533EDJ-T1-GE3
- VISHAY FOIL RESISTORS / VPG SIA533EDJ-T1-GE3
- VISHAY OPTO SIA533EDJ-T1-GE3
- Vishay Intertechnology Inc. SIA533EDJ-T1-GE3