- Mfr. #:
- SIHG32N50D-E3
- Description:
- MOSFET 500V Vds 30V Vgs TO-247AC
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHG32N50D-E3 Information
- D-Series High Voltage Power MOSFETs
- Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247AC-3 |
| Configuration: | Single |
| Technology: | Si |
| Part # Aliases: | SIHG32N50D |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Channel Mode: | Enhancement |
| Series: | D |
| Rise Time: | 75 ns |
| Qg - Gate Charge: | 64 nC |
| Typical Turn-Off Delay Time: | 58 ns |
| Fall Time: | 55 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Factory Pack Quantity: | 500 |
| Width: | 5.31 mm |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Pd - Power Dissipation: | 390 W |
| Vgs - Gate-Source Voltage: | 30 V |
| Id - Continuous Drain Current: | 30 A |
| Typical Turn-On Delay Time: | 27 ns |
| Height: | 20.82 mm |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Length: | 15.87 mm |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SIHG32N50D-E3 Price & Stock
Vishay SIHG32N50D-E3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Mouser | 78-SIHG32N50D-E3 | 497 | 37.31 | 30.90 | 25.41 | 19.57 | 19.57 | 2019-12-06T22:54:47Z |
| Digi-Key | SIHG32N50D-E3-ND | - | - | - | - | 21.32 | 21.32 | 2019-12-08T13:51:07Z |
| Avnet | SIHG32N50D-E3 | - | - | - | - | 18.82 | 17.08 | 2019-12-07T01:49:54Z |
| Avnet Europe | SIHG32N50D-E3 | - | 25.36 | 22.82 | 20.54 | 20.54 | 20.54 | 2019-12-09T07:49:10Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SIHG32N50D-E3 due to regional differences or acquisition. SIHG32N50D-E3 may also be known as the following names:
- VIS SIHG32N50D-E3
- VISH SIHG32N50D-E3
- VISHAY INTERTECHNOLOGY INC SIHG32N50D-E3
- VISHA SIHG32N50D-E3
- VISHAY THIN FILM SIHG32N50D-E3
- VISHAY INTERTECHNOLOGY SIHG32N50D-E3
- VISHY SIHG32N50D-E3
- VISAHY SIHG32N50D-E3
- VISH/IR SIHG32N50D-E3
- VSHY SIHG32N50D-E3
- VSH SIHG32N50D-E3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHG32N50D-E3
- VISHAY ELECTRONIC SIHG32N50D-E3
- VSHAY SIHG32N50D-E3
- VISHAY FOIL RESISTORS SIHG32N50D-E3
- VISHAY AMERICAS INC SIHG32N50D-E3
- VISHAY INTERTECHNOLOGY ASIA PT SIHG32N50D-E3
- VISHAY AMERICAS SIHG32N50D-E3
- VISHAY ELECTRO-FILMS SIHG32N50D-E3
- VISHAY COMPONENTS SIHG32N50D-E3
- Vishay Semiconductors SIHG32N50D-E3
- VISHAY COMPONENTS NEDERLAND SIHG32N50D-E3
- VISHAY INTERTEC SIHG32N50D-E3
- VISHAY FOIL RESISTORS / VPG SIHG32N50D-E3
- VISHAY OPTO SIHG32N50D-E3
- Vishay Intertechnology Inc. SIHG32N50D-E3