IKW30N65EL5XKSA1 Information

TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs

Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.

Specifications

IKW30N65EL5XKSA1 Price & Stock

Infineon IKW30N65EL5XKSA1 pricing and available inventory.

Alternate Names

Infineon has several brands around the world that may have alternate names for IKW30N65EL5XKSA1 due to regional differences or acquisition. IKW30N65EL5XKSA1 may also be known as the following names: