SIZ998DT-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIZ998DT-T1-GE3
Description:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Lifecycle:
New from this manufacturer.
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SIZ998DT-T1-GE3 Information

SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Technology: Si
Mounting Style: SMD/SMT
Series: SIZ
Packaging: Reel
Package / Case: PowerPAIR-6x5-8
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Configuration: Dual
Forward Transconductance - Min: 80 S, 165 S
Rise Time: 65 ns, 65 ns
Length: 6 mm
Width: 5 mm
Rds On - Drain-Source Resistance: 4.7 mOhms, 2.2 mOhms
Factory Pack Quantity: 3000
Vds - Drain-Source Breakdown Voltage: 30 V
Pd - Power Dissipation: 20.2 W, 32.9 W
Id - Continuous Drain Current: 20 A, 60 A
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Qg - Gate Charge: 18 nC, 44.3 nC
Typical Turn-On Delay Time: 15 ns, 25 ns
Typical Turn-Off Delay Time: 10 ns, 17 ns
Fall Time: 10 ns, 10 ns
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Height: 0.8 mm
Minimum Operating Temperature: - 55 C
Vgs - Gate-Source Voltage: - 16 V, 20 V
Maximum Operating Temperature: + 150 C

SIZ998DT-T1-GE3 Price & Stock

Vishay SIZ998DT-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIZ998DT-T1-GE3CT-ND8,51010.439.326.634.584.582020-03-27T13:05:48Z
Digi-KeySIZ998DT-T1-GE3DKR-ND8,51010.439.326.634.584.582020-03-27T13:05:48Z
Digi-KeySIZ998DT-T1-GE3TR-ND6,000----4.112020-03-27T13:05:48Z
AvnetSIZ998DT-T1-GE318,000----4.482020-03-28T01:42:05Z
Mouser78-SIZ998DT-T1-GE33,97310.729.307.174.804.042020-01-14T11:00:49Z
element14 APAC280279916,89411.069.597.394.954.572020-03-28T02:37:15Z
TTISIZ998DT-T1-GE3------2020-03-28T08:28:24Z
Farnell 2280279917,269-8.546.594.884.152020-03-27T02:09:52Z
Farnell2802799RL--8.546.594.884.152020-03-27T02:09:52Z
Newark 243AC402116,89410.729.307.176.086.082020-03-26T02:45:51Z
Newark96AC367118,000----4.022020-03-26T02:45:51Z
Avnet EuropeSIZ998DT-T1-GE350----7.322020-03-28T07:53:35Z
SourceabilitySIZ998DT-T1-GE33,000-----2020-03-03T19:24:07Z
LTL Group617307250-----2020-03-27T08:06:06Z
Classic ComponentsSIZ998DT-T1-GE377-----2020-03-26T22:50:26Z
Abacus TechnologiesSIZ998DT-T1-GE312,196-----2020-02-24T20:07:32Z

Alternate Names

Vishay has several brands around the world that may have alternate names for SIZ998DT-T1-GE3 due to regional differences or acquisition. SIZ998DT-T1-GE3 may also be known as the following names:

  • VIS SIZ998DT-T1-GE3
  • VISH SIZ998DT-T1-GE3
  • VISHAY INTERTECHNOLOGY INC SIZ998DT-T1-GE3
  • VISHA SIZ998DT-T1-GE3
  • VISHAY THIN FILM SIZ998DT-T1-GE3
  • VISHAY INTERTECHNOLOGY SIZ998DT-T1-GE3
  • VISHY SIZ998DT-T1-GE3
  • VISAHY SIZ998DT-T1-GE3
  • VISH/IR SIZ998DT-T1-GE3
  • VSHY SIZ998DT-T1-GE3
  • VSH SIZ998DT-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD SIZ998DT-T1-GE3
  • VISHAY ELECTRONIC SIZ998DT-T1-GE3
  • VSHAY SIZ998DT-T1-GE3
  • VISHAY FOIL RESISTORS SIZ998DT-T1-GE3
  • VISHAY AMERICAS INC SIZ998DT-T1-GE3
  • VISHAY INTERTECHNOLOGY ASIA PT SIZ998DT-T1-GE3
  • VISHAY AMERICAS SIZ998DT-T1-GE3
  • VISHAY ELECTRO-FILMS SIZ998DT-T1-GE3
  • VISHAY COMPONENTS SIZ998DT-T1-GE3
  • Vishay Semiconductors SIZ998DT-T1-GE3
  • VISHAY COMPONENTS NEDERLAND SIZ998DT-T1-GE3
  • VISHAY INTERTEC SIZ998DT-T1-GE3
  • VISHAY FOIL RESISTORS / VPG SIZ998DT-T1-GE3
  • VISHAY OPTO SIZ998DT-T1-GE3
  • Vishay Intertechnology Inc. SIZ998DT-T1-GE3