IRG8P08N120KD-EPBF - Infineon / IR

Mfr. #:
IRG8P08N120KD-EPBF
Description:
IGBT Transistors 1200V IGBT GEN8
Lifecycle:
New from this manufacturer.
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IRG8P08N120KD-EPBF Information

OMO is specialized in sourcing hard-to-find and obsolete parts. we have stock of IRG8P08N120KD-EPBF at omo-ic.com. Email us to get the newest quotation lead time and stock availability.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247AD-3
Configuration: Single
Technology: Si
Part # Aliases: SP001532714
Brand: Infineon / IR
Manufacturer: Infineon
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Pd - Power Dissipation: 89 W
Continuous Collector Current Ic Max: 8 A
Maximum Gate Emitter Voltage: 30 V
Factory Pack Quantity: 25
Continuous Collector Current at 25 C: 15 A
Collector- Emitter Voltage VCEO Max: 1200 V
Gate-Emitter Leakage Current: 100 nA
Collector-Emitter Saturation Voltage: 1.7 V
Unit Weight: 0.229281 oz
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

IRG8P08N120KD-EPBF Price & Stock

Infineon IRG8P08N120KD-EPBF pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser942-IRG8P08N120KDEPB9032.6927.7924.0817.2215.052019-12-10T09:00:33Z
Arrow ElectronicsIRG8P08N120KD-EPBF1253.723.723.723.723.722019-12-25T16:00:39Z
VericalIRG8P08N120KD-EPBF125-3.723.723.723.722019-12-25T17:44:08Z
LTL Group4053258722-----2019-12-23T01:29:13Z

Alternate Names

Infineon has several brands around the world that may have alternate names for IRG8P08N120KD-EPBF due to regional differences or acquisition. IRG8P08N120KD-EPBF may also be known as the following names:

  • Infineon Technologies IRG8P08N120KD-EPBF
  • INF IRG8P08N120KD-EPBF
  • INFIN IRG8P08N120KD-EPBF
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  • IFX IRG8P08N120KD-EPBF
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  • INFINEON/SIEMENS IRG8P08N120KD-EPBF
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  • IR/Infineon IRG8P08N120KD-EPBF
  • INFINEON TECHNOLOGIES (ASIA IRG8P08N120KD-EPBF
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