IXFP34N65X2M - IXYS

Mfr. #:
IXFP34N65X2M
Description:
MOSFET 650V/34A OVERMOLDED TO-220
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase IXFP34N65X2M

IXFP34N65X2M Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFETâ„¢
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Manufacturer: IXYS
Brand: IXYS
Tradename: HiPerFET
Channel Mode: Enhancement
Series: 650V Ultra Junction X2
Vds - Drain-Source Breakdown Voltage: 650 V
Typical Turn-Off Delay Time: 64 ns
Rise Time: 60 ns
Qg - Gate Charge: 56 nC
Factory Pack Quantity: 50
Pd - Power Dissipation: 40 W
Typical Turn-On Delay Time: 37 ns
Id - Continuous Drain Current: 34 A
Fall Time: 30 ns
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Forward Transconductance - Min: 12 S
Rds On - Drain-Source Resistance: 100 mOhms
Vgs - Gate-Source Voltage: 10 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 155 C

IXFP34N65X2M Price & Stock

IXYS IXFP34N65X2M pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXFP34N65X2M-ND538.0234.1225.8019.6419.352020-02-21T17:09:39Z
Mouser747-IXFP34N65X2M-46.1041.1833.8028.8828.882020-02-21T22:48:47Z
TMEIXFP34N65X2M3026.4220.9419.6119.6119.612020-02-23T10:38:07Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXFP34N65X2M due to regional differences or acquisition. IXFP34N65X2M may also be known as the following names:

  • IXYS CORPORATION IXFP34N65X2M
  • IXY IXFP34N65X2M
  • IXYS CORP IXFP34N65X2M
  • IXYS SEMICONDUCTOR IXFP34N65X2M
  • IXYS Integrated Circuits Division IXFP34N65X2M
  • IXYS Integrated Circuits/Clare IXFP34N65X2M
  • IXYS GMBH IXFP34N65X2M
  • IXYS-DIRECTED ENERGY IXFP34N65X2M
  • IXYS Integrated Circuits Division Inc IXFP34N65X2M
  • IXYS SEMICONDUCTOR GMBH IXFP34N65X2M
  • IXYS (VA) IXFP34N65X2M
  • IXYS CORPO IXFP34N65X2M
  • IXYS Semiconducter GmbH IXFP34N65X2M
  • IXYS SEMICONDUCTOR CORP IXFP34N65X2M
  • IXYS INTEGCIRCUITS DIV(CLARE) IXFP34N65X2M
  • IXYS Colorado (IXYS RF Division) IXFP34N65X2M
  • IXYS SEMICOND IXFP34N65X2M
  • IXYS Integrated Circuits IXFP34N65X2M
  • Zilog/IXYS IXFP34N65X2M
  • IXYSCOR IXFP34N65X2M
  • Clare/LXYS Corporation IXFP34N65X2M
  • IXYS-RF IXFP34N65X2M
  • CP CLAIRE IXFP34N65X2M
  • Clare (IXYS) IXFP34N65X2M
  • IXYS CORPORATION|V IXFP34N65X2M