- Mfr. #:
- T2G6000528-Q3
- Description:
- RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
T2G6000528-Q3 Information
- T2G GaN HEMT Transistors
- QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
- QPD GaN RF Transistors
- Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Specifications
| Moisture Sensitive: | Yes |
|---|---|
| RoHS: | Y |
| Packaging: | Tray |
| Subcategory: | Transistors |
| Development Kit: | T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5 |
| Series: | T2G |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Brand: | Qorvo |
| Manufacturer: | Qorvo |
| Transistor Polarity: | N-Channel |
| Application: | Military Radar, Professional and Military Radio Communications |
| Transistor Type: | HEMT |
| Technology: | GaN SiC |
| Operating Frequency: | DC to 6 GHz |
| Id - Continuous Drain Current: | 650 mA |
| Gain: | 15 dB |
| Pd - Power Dissipation: | 12.5 W |
| Part # Aliases: | 1099997 |
| Factory Pack Quantity: | 100 |
| Output Power: | 10 W |
| Maximum Operating Temperature: | - |
| Minimum Operating Temperature: | - |
| Forward Transconductance - Min: | - |
| Maximum Drain Gate Voltage: | - |
| Vgs - Gate-Source Breakdown Voltage: | - |
| Vds - Drain-Source Breakdown Voltage: | - |
T2G6000528-Q3 Price & Stock
TriQuint T2G6000528-Q3 pricing and available inventory.
Alternate Names
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