SCS220KE2HRC Information

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

Industrial Product Solutions

ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, which far exceeds the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. The AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V-1200V, a continuous forward current range of 1.2uA-260uA, and a total power dissipation range between 48W-280W. The devices are available in TO-220, TO-247, and TO-263 packages, with a max temperature of +175°C.

Automotive Devices

ROHM Automotive Devices contribute to the evolution of the automotive sector and next-generation vehicles with their long-term and stable supply of products. ROHM's extensive lineup of devices supports the transition towards increased computerization and connectivity. ROHM focuses on safety, comfort, and ecology while providing optimum solutions to the customers' needs.

SiC Schottky Barrier Diodes

ROHM Semiconductor® SiC (Silicon Carbide) Schottky Barrier Diodes feature low total capacitive (Qc) that reduces switching loss, enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. This makes them ideal Ideal for use as key devices in a variety of applications, including inverters and chargers for EV and solar power conditioners.

Specifications

SCS220KE2HRC Price & Stock

Rohm SCS220KE2HRC pricing and available inventory.

Alternate Names

Rohm has several brands around the world that may have alternate names for SCS220KE2HRC due to regional differences or acquisition. SCS220KE2HRC may also be known as the following names: