F3L25R12W1T4B27BOMA1 - Infineon Technologies

Mfr. #:
F3L25R12W1T4B27BOMA1
Description:
IGBT Modules LOW POWER EASY
Lifecycle:
New from this manufacturer.
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F3L25R12W1T4B27BOMA1 Information

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Specifications

RoHS: Y
Packaging: Tray
Mounting Style: Through Hole
Technology: Si
Brand: Infineon Technologies
Manufacturer: Infineon
Subcategory: IGBTs
Product: IGBT Silicon Modules
Product Category: IGBT Modules
Product Type: IGBT Modules
Part # Aliases: F3L25R12W1T4_B27 SP001056108
Package / Case: EasyPack1B
Tradename: EasyPACK
Configuration: 3-Phase
Continuous Collector Current at 25 C: 25 A
Factory Pack Quantity: 24
Pd - Power Dissipation: 215 W
Maximum Gate Emitter Voltage: 20 V
Collector- Emitter Voltage VCEO Max: 1200 V
Gate-Emitter Leakage Current: 100 nA
Collector-Emitter Saturation Voltage: 1.85 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C

F3L25R12W1T4B27BOMA1 Price & Stock

Infineon F3L25R12W1T4B27BOMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser726-F3L25R12W1T4B27B19231.58213.59182.42182.42182.422020-04-13T21:03:05Z
Digi-KeyF3L25R12W1T4B27BOMA1-ND---213.65213.65213.652020-04-14T13:18:08Z
AvnetF3L25R12W1T4B27BOMA1---160.66152.49152.492020-04-14T01:01:44Z
Avnet EuropeSP001056108-207.27186.54167.89167.89167.892020-04-14T07:13:13Z

Alternate Names

Infineon has several brands around the world that may have alternate names for F3L25R12W1T4B27BOMA1 due to regional differences or acquisition. F3L25R12W1T4B27BOMA1 may also be known as the following names:

  • Infineon Technologies F3L25R12W1T4B27BOMA1
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