IXTP60N20T - IXYS

Mfr. #:
IXTP60N20T
Description:
MOSFET Trench POWER MOSFETs 200v, 60A
Lifecycle:
New from this manufacturer.
Delivery
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Purchase IXTP60N20T

IXTP60N20T Information

IXTA60N20T & IXTP60N20T Trench Power MOSFETs
IXYS IXTA60N20T and IXTP60N20T Trench™ Power MOSFETs are N-Channel enhancement mode, avalanche rated power MOSFETs for PDP drivers. IXYS IXTA60N20T and IXTP60N20T Trench™ Power MOSFETs feature a high current handling capability, low RDS(on), high power density, and a fast intrinsic rectifier. These MOSFETs are useful for applications such as DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, and high speed power switching applications.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Manufacturer: IXYS
Brand: IXYS
Series: IXTP60N20
Tradename: HiPerFET
Channel Mode: Enhancement
Qg - Gate Charge: 73 nC
Id - Continuous Drain Current: 60 A
Pd - Power Dissipation: 500 W
Factory Pack Quantity: 50
Rds On - Drain-Source Resistance: 40 mOhms
Forward Transconductance - Min: 40 S
Typical Turn-Off Delay Time: 33 ns
Vgs th - Gate-Source Threshold Voltage: 3 V
Typical Turn-On Delay Time: 22 ns
Vds - Drain-Source Breakdown Voltage: 200 V
Fall Time: 13 ns
Rise Time: 13 ns
Vgs - Gate-Source Voltage: 10 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.012346 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IXTP60N20T Price & Stock

IXYS IXTP60N20T pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser747-IXTP60N20T6138.2434.2025.3423.9423.942020-01-25T00:05:22Z
Digi-KeyIXTP60N20T-ND---26.7626.7626.762020-01-23T23:05:36Z
LTL Group4060761523-----2020-01-21T06:17:26Z
TMEIXTP60N20T3624.5619.5117.4917.4917.492020-01-25T10:48:46Z
Dana MicrosystemsIXTP60N20T3,914-----2020-01-25T03:25:15Z
Abacus TechnologiesIXTP60N20T400-----2019-12-06T00:07:36Z
North Star MicroIXTP60N20TContact-----2015-05-20T05:52:12Z
Sierra ICIXTP60N20TContact-----2019-12-16T00:48:56Z

Alternate Names

IXYS has several brands around the world that may have alternate names for IXTP60N20T due to regional differences or acquisition. IXTP60N20T may also be known as the following names:

  • IXYS CORPORATION IXTP60N20T
  • IXY IXTP60N20T
  • IXYS CORP IXTP60N20T
  • IXYS SEMICONDUCTOR IXTP60N20T
  • IXYS Integrated Circuits Division IXTP60N20T
  • IXYS Integrated Circuits/Clare IXTP60N20T
  • IXYS GMBH IXTP60N20T
  • IXYS-DIRECTED ENERGY IXTP60N20T
  • IXYS Integrated Circuits Division Inc IXTP60N20T
  • IXYS SEMICONDUCTOR GMBH IXTP60N20T
  • IXYS (VA) IXTP60N20T
  • IXYS CORPO IXTP60N20T
  • IXYS Semiconducter GmbH IXTP60N20T
  • IXYS SEMICONDUCTOR CORP IXTP60N20T
  • IXYS INTEGCIRCUITS DIV(CLARE) IXTP60N20T
  • IXYS Colorado (IXYS RF Division) IXTP60N20T
  • IXYS SEMICOND IXTP60N20T
  • IXYS Integrated Circuits IXTP60N20T
  • Zilog/IXYS IXTP60N20T
  • IXYSCOR IXTP60N20T
  • Clare/LXYS Corporation IXTP60N20T
  • IXYS-RF IXTP60N20T
  • CP CLAIRE IXTP60N20T
  • Clare (IXYS) IXTP60N20T
  • IXYS CORPORATION|V IXTP60N20T