- Mfr. #:
- SIHG80N60E-GE3
- Description:
- MOSFET 600V Vds 30V Vgs TO-247AC
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHG80N60E-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Packaging: | Tube |
Mounting Style: | Through Hole |
Package / Case: | TO-247AC-3 |
Configuration: | Single |
Technology: | Si |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Series: | E |
Id - Continuous Drain Current: | 80 A |
Typical Turn-On Delay Time: | 63 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Pd - Power Dissipation: | 520 W |
Factory Pack Quantity: | 500 |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Vgs - Gate-Source Voltage: | 30 V |
Qg - Gate Charge: | 295 ns |
Rds On - Drain-Source Resistance: | 26 mOhms |
Typical Turn-Off Delay Time: | 239 ns |
Rise Time: | 153 ns |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Unit Weight: | 0.068784 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHG80N60E-GE3 Price & Stock
Vishay SIHG80N60E-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIHG80N60E-GE3-ND | - | 15.78 | 14.51 | 12.03 | 10.00 | 10.00 | 2020-03-04T13:54:24Z |
Mouser | 78-SIHG80N60E-GE3 | - | 15.78 | 14.51 | 12.25 | 11.90 | 11.90 | 2020-03-04T23:40:23Z |
Avnet | SIHG80N60E-GE3 | - | - | - | - | 10.62 | 9.64 | 2020-03-04T03:47:28Z |
Newark | 20AC3823 | - | - | - | - | 9.41 | 9.41 | 2020-03-04T03:58:46Z |
Avnet Europe | SIHG80N60E-GE3 | - | 14.08 | 12.67 | 11.41 | 11.41 | 11.41 | 2020-03-04T08:31:06Z |
Alternate Names
Vishay has several brands around the world that may have alternate names for SIHG80N60E-GE3 due to regional differences or acquisition. SIHG80N60E-GE3 may also be known as the following names:
- VIS SIHG80N60E-GE3
- VISH SIHG80N60E-GE3
- VISHAY INTERTECHNOLOGY INC SIHG80N60E-GE3
- VISHA SIHG80N60E-GE3
- VISHAY THIN FILM SIHG80N60E-GE3
- VISHAY INTERTECHNOLOGY SIHG80N60E-GE3
- VISHY SIHG80N60E-GE3
- VISAHY SIHG80N60E-GE3
- VISH/IR SIHG80N60E-GE3
- VSHY SIHG80N60E-GE3
- VSH SIHG80N60E-GE3
- VISHAY INTERTECHNOLOGY ASIA PTE LTD SIHG80N60E-GE3
- VISHAY ELECTRONIC SIHG80N60E-GE3
- VSHAY SIHG80N60E-GE3
- VISHAY FOIL RESISTORS SIHG80N60E-GE3
- VISHAY AMERICAS INC SIHG80N60E-GE3
- VISHAY INTERTECHNOLOGY ASIA PT SIHG80N60E-GE3
- VISHAY AMERICAS SIHG80N60E-GE3
- VISHAY ELECTRO-FILMS SIHG80N60E-GE3
- VISHAY COMPONENTS SIHG80N60E-GE3
- Vishay Semiconductors SIHG80N60E-GE3
- VISHAY COMPONENTS NEDERLAND SIHG80N60E-GE3
- VISHAY INTERTEC SIHG80N60E-GE3
- VISHAY FOIL RESISTORS / VPG SIHG80N60E-GE3
- VISHAY OPTO SIHG80N60E-GE3
- Vishay Intertechnology Inc. SIHG80N60E-GE3