Mfr. #:
KSD261CGBU
Description:
Bipolar Transistors - BJT NPN Epitaxial Sil
Lifecycle:
New from this manufacturer.
Delivery
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KSD261CGBU Information

Images are for reference only. Mfr. #: KSD261CGBU is in stock.
See Product Specifications for more details.
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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: Through Hole
Package / Case: TO-92-3
Configuration: Single
Brand: ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Transistor Polarity: NPN
Packaging: Bulk
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Pd - Power Dissipation: 500 mW
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Factory Pack Quantity: 1000
DC Current Gain hFE Max: 400
Height: 4.58 mm
Length: 4.58 mm
Width: 3.86 mm
Collector- Emitter Voltage VCEO Max: 20 V
DC Collector/Base Gain hfe Min: 120
Maximum DC Collector Current: 0.5 A
Collector-Emitter Saturation Voltage: 0.18 V
Unit Weight: 0.008466 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

KSD261CGBU Price & Stock

Fairchild Semiconductor KSD261CGBU pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
TransparentCKSD261CGBUContact-----2016-01-28T17:08:50Z

Alternate Names

Fairchild Semiconductor has several brands around the world that may have alternate names for KSD261CGBU due to regional differences or acquisition. KSD261CGBU may also be known as the following names:

  • FAIRCHILD KSD261CGBU
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